Single FETs, MOSFETs AUIRFZ44ZS product image

AUIRFZ44ZS

  • Description:MOSFET N-CH 55V 51A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:54d24e75b997 Category: Brand:

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AUIRFZ44ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 51A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFZ44ZS

  • Description:MOSFET N-CH 55V 51A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:13.9mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):80W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFZ44ZS

AUIRFZ44ZS

Single FETs, MOSFETs Overview

The AUIRFZ44ZS is an automotive-grade, single N-channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It utilizes HEXFET technology and is housed in a D2PAK (TO-263) surface-mount package. The device features a maximum drain-source voltage of 55 V and supports a continuous drain current of 51 A at case temperature. Its maximum on-resistance is specified at 13.9 mΩ when driven by a gate-source voltage of 10 V. The component is qualified to AEC-Q101 standards and operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments.
  • HEXFET technology architecture providing low conduction losses and high efficiency.
  • Enhanced thermal performance allowing operation up to a maximum junction temperature of 175 °C.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side switching applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm that the intended application meets the absolute maximum ratings defined in the datasheet. Ensure compatibility with standard gate drive voltages. Check for RoHS compliance status relevant to the manufacturing date code.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive-grade reliability and low on-resistance in a surface-mount format. The 55 V rating suits 12 V and 24 V automotive electrical systems. Consider the thermal resistance characteristics for heat dissipation requirements in the target enclosure design.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs designed for general-purpose switching. The 'AU' prefix indicates automotive grade qualification. It serves as a discrete solution for managing power flow in electronic control units and motor drivers where space constraints favor surface-mount packaging over through-hole alternatives.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the pinout, voltage ratings, and thermal characteristics. Verify that alternative components also hold necessary automotive certifications if required by the system design.

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