AUIRLR120N

Single FETs, MOSFETs Overview

The AUIRLR120N is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252AA) surface-mount package and utilizes advanced planar technology to achieve low on-resistance per silicon area. The device supports a maximum drain-to-source voltage of 100V and a continuous drain current of 10A at 25°C case temperature. Key electrical parameters include a maximum static drain-to-source on-resistance of 0.185Ω at VGS=10V, a gate threshold voltage range of 1.0V to 2.0V, and a total gate charge of 20nC. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified according to AEC-Q101 standards for reliability in vehicle applications.
• Logic level gate drive capability allows efficient control with standard logic voltages.
• Fully avalanche rated with repetitive avalanche energy allowed up to the maximum junction temperature.
• Fast switching performance combined with dynamic dV/dt rating for robust operation.

Single FETs, MOSFETs Applications

• Automotive power management systems
• Motor control circuits
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your packaging needs, such as tube or tape and reel formats. Confirm that the component meets the exact automotive qualification standards mandated by your system design. Ensure compatibility with the D-Pak footprint dimensions during PCB layout. Check for any lead-free compliance requirements if applicable to your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high reliability in automotive environments. Consider the thermal resistance characteristics for heat dissipation planning. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching speeds. Verify that the 100V breakdown voltage provides sufficient margin for your application's peak voltage conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents a cellular design optimized for low on-resistance and ruggedized performance. The product line is specifically engineered to meet the stringent demands of automotive electronics, ensuring long-term durability and efficiency in demanding operating conditions.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-references within the manufacturer's portfolio. Verify pinout compatibility and package dimensions before substitution. Ensure that the replacement device meets or exceeds the original voltage, current, and thermal specifications. Confirm that any alternative part maintains the necessary automotive qualification status.

Single FETs, MOSFETs FAQ

Is the AUIRLR120N suitable for high-frequency switching applications?

Yes, the device features fast switching characteristics and a dynamic dV/dt rating, making it suitable for high-frequency applications where rapid transitions are required.

What is the maximum allowable junction temperature for this MOSFET?

The maximum operating junction temperature for the AUIRLR120N is +175°C, allowing for operation in high-temperature environments typical of automotive applications.