Single FETs, MOSFETs AUIRLU2905 product image

AUIRLU2905

  • Description:MOSFET N-CH 55V 42A IPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:f458cdb3cf1d Category: Brand:

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AUIRLU2905 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 42A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLU2905

  • Description:MOSFET N-CH 55V 42A IPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:27mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:48 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for AUIRLU2905

AUIRLU2905

Single FETs, MOSFETs Overview

The AUIRLU2905 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance per silicon area, making it suitable for high-efficiency switching applications. The device features a logic-level gate drive and fast switching capabilities. Key electrical parameters include a drain-to-source breakdown voltage of 55 V, a continuous drain current of 42 A at 25°C case temperature, and a maximum static drain-to-source on-resistance of 27 mΩ at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified according to AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Logic level gate drive capability
  • Fully avalanche rated with repetitive avalanche allowance

Single FETs, MOSFETs Applications

  • Automotive electronic systems
  • Power management circuits requiring ruggedized design
  • Applications utilizing fast switching speeds

Single FETs, MOSFETs Procurement Notes

Verify the specific package type and ordering suffix when sourcing. Confirm that the component meets the required automotive qualification standards (AEC-Q101) for your application environment. Check the manufacturer's website for the most current datasheet revisions and availability status, as product lifecycles may change.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance in automotive environments. Ensure the thermal management strategy supports the specified junction temperature limits. Consider the gate charge requirements for driver selection to optimize switching efficiency. Verify that the on-resistance specifications meet the conduction loss requirements of the target circuit.

Single FETs, MOSFETs Part Context

This part belongs to the IRLR/U2905 family of HEXFET power MOSFETs from Infineon Technologies. It shares core electrical characteristics with the IRLR2905 but is distinguished by its automotive qualification. The 'U' suffix indicates the I-Pak (TO-251AA) through-hole package variant.

Single FETs, MOSFETs Replacement Considerations

The IRLU2905 serves as a non-automotive grade equivalent with identical electrical specifications. For surface-mount needs, the IRLR2905 offers similar performance in a D-Pak package. Verify pinout compatibility and thermal resistance differences before substitution.

AUIRLU2905AUIRLU2905

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