BA782S-HE3-18

RF Diode Overview

The BA782S-HE3-18 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in an SOD-323 surface-mount package. It is designed for electric bandswitching in radio and TV tuners operating within the 50 to 1000 MHz frequency range. The device features AEC-Q101 qualification, RoHS compliance, and halogen-free construction. Key electrical parameters include a maximum reverse voltage of 35 V, a continuous forward current rating of 100 mA, and a junction temperature limit of 125 °C. At 100 mA forward current, the typical forward voltage is 1000 mV. Diode capacitance ranges from 1.25 pF at 3 V reverse bias to 1.5 pF at 1 V reverse bias, measured at 1 MHz.

RF Diode Feature Summary

• Optimized for high-frequency bandswitching applications in radio and television tuner circuits
• Maintains constant and minimal dynamic forward resistance across wide frequency and current variations
• Exhibits low reverse capacitance that remains largely independent of applied reverse voltage
• Qualified for automotive environments under AEC-Q101 standards with halogen-free material composition

RF Diode Applications

• Electric bandswitching in FM radio tuners
• Frequency selection circuits in television tuners
• High-speed signal routing in RF front-end modules

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm that the ordering suffix matches the specific tape-and-reel packaging configuration required for automated assembly processes. Ensure compliance with regional environmental directives regarding restricted substances before final integration into end products.

RF Diode Selection Notes

Select this component when low parasitic capacitance and stable dynamic resistance are critical for maintaining signal integrity in VHF/UHF tuning networks. Evaluate thermal management requirements against the specified 125 °C junction temperature limit. Compare performance characteristics against alternative switching diodes if higher current ratings or different voltage thresholds are necessary for the target circuit design.

RF Diode Part Context

This part belongs to the BA782S/BA783S series of band switching diodes. The HE3 suffix indicates Halogen-Free and RoHS-compliant manufacturing compliant with AEC-Q101 automotive standards. The -18 suffix denotes the standard 13-inch reel packaging format containing 10,000 units per box. The BA783S variant offers slightly lower dynamic forward resistance compared to the BA782S.

RF Diode Replacement Considerations

Direct functional substitutes within the same Vishay family include the BA783S-HE3-18, which shares identical packaging and qualification but differs in dynamic forward resistance values. Verify pinout compatibility and thermal characteristics when considering cross-manufacturer alternatives for SOD-323 packaged switching diodes.

RF Diode FAQ

How does the reverse capacitance of the BA782S vary with reverse voltage?

The reverse capacitance is small and largely independent of the reverse voltage, measuring approximately 1.5 pF at 1 V and 1.25 pF at 3 V at 1 MHz.

What is the maximum operating junction temperature for this diode?

The maximum operating junction temperature is limited to 125 °C.

Is the BA782S-HE3-18 suitable for automotive applications?

Yes, the HE3 version is qualified according to the AEC-Q101 automotive standard.