RF Diode BAR 65-02L E6327 product image

BAR 65-02L E6327

$0.08
  • Description:RF DIODE PIN 30V 250MW PG-TSLP
  • Series:-

SKU:82cc062961b0 Category: Brand:

  
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BAR 65-02L E6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 30V 250MW PG-TSLP. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR 65-02L E6327

  • Description:RF DIODE PIN 30V 250MW PG-TSLP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.8pF @ 3V, 1MHz
  • Resistance @ If, F:900mOhm @ 10mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SOD-882
  • Supplier Device Package:PG-TSLP-2-1
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR 65-02L E6327

BAR 65-02L E6327

RF Diode Overview

The BAR 65-02L E6327 is a silicon PIN diode from Infineon Technologies, designed for mobile communication low-loss transmit-receiver switches and TV-tuner band switching. It features a leadless TSLP-2-1 package with a single configuration. Key electrical parameters include a reverse voltage of 30 V, forward current of 100 mA, and total power dissipation of 250 mW. The device exhibits very low forward resistance (typ. 0.65 Ω @ 5 mA) and low capacitance (typ. 0.5 pF @ 0V). Operating temperature ranges from -55°C to 125°C, with a junction temperature up to 150°C.

RF Diode Feature Summary

  • Designed for fast switching applications in RF circuits
  • Provides very low forward resistance for minimal signal loss
  • Features low capacitance for high-frequency performance
  • Utilizes a compact leadless package for space-constrained designs

RF Diode Applications

  • Mobile communication low loss transmit-receiver switches
  • Band switch for TV-tuners
  • Fast switching applications

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as indicated in the datasheet. Check for end-of-life notifications or obsolescence warnings before procurement planning. Ensure storage conditions adhere to specified limits to maintain device integrity.

RF Diode Selection Notes

Select this component for applications requiring low insertion loss and high isolation in RF paths. Consider the TSLP-2-1 package size for PCB layout constraints. Evaluate thermal management requirements based on the specified power dissipation and thermal resistance values. Ensure operating frequencies align with the device's capacitance and resistance characteristics.

RF Diode Part Context

This part belongs to the BAR65 series of silicon PIN diodes from Infineon Technologies. The series includes variants like BAR65-02V and BAR65-03W, differing primarily in packaging and specific electrical characteristics. The BAR65-02L specifically utilizes the TSLP-2-1 leadless package, distinguishing it from SC79 or SOD323 packaged counterparts within the same functional family.

RF Diode Replacement Considerations

Direct substitutes within the same series include BAR65-02V (SC79 package) and BAR65-03W (SOD323 package), though package differences require layout adjustments. Verify pinout compatibility and thermal performance when considering alternative packages.

BAR 65-02L E6327BAR 65-02L E6327
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