RF Diode BAT1503WE6327HTSA1 product image

BAT1503WE6327HTSA1

$0.67
  • Description:DIODE SCHOTTKY 4V 100MW SOD323
  • Series:-

SKU:075f7c36efa7 Category: Brand:

  
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BAT1503WE6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 100MW SOD323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1503WE6327HTSA1

  • Description:DIODE SCHOTTKY 4V 100MW SOD323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:110 mA
  • Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):100 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-76, SOD-323
  • Supplier Device Package:PG-SOD323-3D
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT1503WE6327HTSA1

BAT1503WE6327HTSA1

RF Diode Overview

The BAT1503WE6327HTSA1 is a single silicon RF Schottky diode from Infineon Technologies, designed for high-frequency mixer and detector applications up to 12 GHz. It features an integrated on-chip guard ring for over-voltage protection. The device operates within a temperature range of -55 °C to +150 °C. Key electrical parameters include a maximum reverse voltage (VR) of 4 V, a forward current (IF) of 110 mA, and a total power dissipation (PTOT) of 100 mW at a soldering point temperature of 78 °C. Typical characteristics at TA = 25 °C include a breakdown voltage (VBR) of 4 V at IR = 100 μA, a reverse current (IR) of 5 μA at VR = 1 V, and a junction capacitance (C) of 0.28 pF at VR = 0 V and f = 1 MHz.

RF Diode Feature Summary

  • Low inductance design with a typical value of 1.8 nH
  • Low junction capacitance of 0.28 pF at 1 MHz
  • Integrated on-chip guard ring for enhanced over-voltage protection

RF Diode Applications

  • Mixers and detectors in sensor interfaces of security systems
  • Telematic systems
  • Radar systems for industrial use
  • Compensators

RF Diode Procurement Notes

Verify the component against official Infineon documentation to confirm authenticity and specifications. Ensure compliance with JEDEC standards for industrial applications. Check for ESD sensitivity during handling. Confirm package type SOD323 and marking details match the datasheet requirements before integration into production workflows.

RF Diode Selection Notes

Select this component for circuits requiring low barrier height and minimal parasitic effects at frequencies up to 12 GHz. Consider the 4 V reverse voltage limit and 110 mA forward current rating when designing bias networks. The SOD323 package is suitable for compact layouts. Evaluate thermal resistance values if operating near maximum power dissipation limits.

RF Diode Part Context

This part belongs to the BAT15 series of silicon RF Schottky diodes manufactured by Infineon Technologies. It utilizes standard industry packaging dimensions for surface-mount technology. The product is Pb-free, RoHS compliant, and halogen-free, adhering to environmental regulations for electronic components.

RF Diode Replacement Considerations

BAT15-02W, BAT15-04W, BAT15-05W

BAT1503WE6327HTSA1BAT1503WE6327HTSA1
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