RF Diode BAT1504WE6327BTSA1 product image

BAT1504WE6327BTSA1

  • Description:DIODE SCHOTTKY 4V 100MW SOT323-3
  • Series:-

SKU:b751c0d3b521 Category: Brand:

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BAT1504WE6327BTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 100MW SOT323-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1504WE6327BTSA1

  • Description:DIODE SCHOTTKY 4V 100MW SOT323-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:110 mA
  • Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):100 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT1504WE6327BTSA1

BAT1504WE6327BTSA1

RF Diode Overview

The BAT1504WE6327BTSA1 is a silicon Schottky diode from the BAT15 series, designed for low-noise RF applications. It features a dual-series configuration within a SOT-323 package. Key electrical parameters include a maximum reverse voltage of 4 V and a forward current rating of 110 mA. The device exhibits a typical forward voltage of 0.32 V at 10 mA and a differential forward resistance of 5.5 Ω. Total power dissipation is rated at 100 mW, with an operating temperature range spanning from -55 °C to +150 °C.

RF Diode Feature Summary

  • Low barrier type optimized for DBS mixer applications up to 12 GHz
  • Designed for phase detectors and modulators with low noise figure
  • Dual series configuration in a compact surface-mount package

RF Diode Applications

  • DBS mixer applications
  • Phase detectors
  • Modulators

RF Diode Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement specifications.

RF Diode Selection Notes

Select this component for circuits requiring low forward voltage and minimal capacitance in the RF spectrum. The dual-series topology suits balanced mixer designs. Evaluate thermal constraints carefully, as the total power dissipation is limited to 100 mW. Ensure the operating environment remains within the specified -55 °C to +150 °C junction temperature range.

RF Diode Part Context

This part belongs to the BAT15 family of silicon Schottky diodes manufactured by Infineon Technologies. The series includes various configurations such as single, common cathode, and anti-parallel pairs. These components are specifically engineered for high-frequency performance, offering low parasitic inductance and capacitance suitable for microwave frequencies.

RF Diode Replacement Considerations

Direct replacements within the same series include BAT15-03W and BAT15-05W, which share similar electrical characteristics but differ in internal configuration. Verify pinout compatibility and package dimensions when substituting.

BAT1504WE6327BTSA1BAT1504WE6327BTSA1

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