BAT6203WE6327HTSA1

RF Diode Overview

The BAT6203WE6327HTSA1 is a silicon PIN diode manufactured by Infineon Technologies, housed in the SOD-323 surface-mount package. It features a peak reverse voltage of 150 V and a maximum forward current of 100 mA. The device exhibits a low junction capacitance of 4 pF at zero bias and a reverse leakage current of 10 µA at 150 V. Operating temperatures range from -65 °C to +150 °C, with a power dissipation rating of 250 mW.

RF Diode Feature Summary

• PIN diode structure optimized for RF switching applications
• Low junction capacitance for high-frequency signal integrity
• Automotive qualification compliant with AEC-Q100 standards

RF Diode Applications

• RF switching circuits
• Antenna switching modules
• High-frequency signal routing

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm lot traceability and RoHS compliance status prior to integration. Ensure storage conditions maintain moisture sensitivity level integrity. Validate datasheet revisions against final design specifications.

RF Diode Selection Notes

Select this component for designs requiring low-capacitance RF switching within automotive temperature ranges. Compare junction capacitance and reverse recovery time against alternative PIN diodes. Verify package compatibility with existing PCB footprint constraints.

RF Diode Part Context

This part belongs to the BAT62 series of PIN diodes from Infineon. It shares the SOD-323 form factor with other small-signal diodes but utilizes PIN technology for superior RF performance compared to standard PN junction devices.

RF Diode Replacement Considerations

BAT6203WE6327HTSA1 is listed as obsolete or end-of-life. Consider equivalent PIN diodes from Infineon or other manufacturers offering similar 150V ratings and SOD-323 packaging.