RF Diode BAT6804WE6327BTSA1 product image

BAT6804WE6327BTSA1

  • Description:DIODE SCHOTTKY 8V 150MW SOT323-3
  • Series:-

SKU:dd344ba09527 Category: Brand:

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BAT6804WE6327BTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 8V 150MW SOT323-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT6804WE6327BTSA1

  • Description:DIODE SCHOTTKY 8V 150MW SOT323-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:130 mA
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:10Ohm @ 5mA, 10kHz
  • Power Dissipation (Max):150 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT6804WE6327BTSA1

BAT6804WE6327BTSA1

RF Diode Overview

The BAT6804WE6327BTSA1 is a silicon Schottky diode from the Infineon BAT68 series, housed in a SOT-323-3 surface-mount package. It features a dual series configuration with an 8 V reverse voltage rating and a 130 mA forward current capacity. The device exhibits a maximum forward voltage of 390 mV at 10 mA and a low junction capacitance of 1 pF at 0 V bias. Designed for high-speed switching and mixer applications in the VHF/UHF range, it operates within a temperature range of -55°C to +150°C.

RF Diode Feature Summary

  • Dual series configuration optimized for RF mixer applications
  • Low junction capacitance supporting VHF/UHF frequency operation
  • High-speed switching capability with minimal differential resistance

RF Diode Applications

  • RF mixer circuits in VHF and UHF bands
  • High-speed signal switching applications
  • Demodulation stages in radio frequency receivers

RF Diode Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure that the component meets the required RoHS compliance standards for your manufacturing process. Cross-reference the datasheet electrical characteristics with your circuit design constraints before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a dual series Schottky topology is required for low-capacitance RF mixing. The SOT-323-3 package suits space-constrained designs. Evaluate the 8 V reverse voltage limit and 130 mA current rating against peak signal levels to ensure reliable operation under varying thermal conditions.

RF Diode Part Context

This part belongs to the Infineon BAT68 family of silicon Schottky diodes. The series provides various configurations including single, common anode, parallel pair, and parallel triple options. These devices are engineered specifically for high-frequency performance, offering low parasitic inductance and capacitance suitable for modern communication systems.

RF Diode Replacement Considerations

BAT68-04W serves as a direct functional equivalent within the same series. Verify pinout compatibility and package dimensions (SOT-323) before substitution. Confirm that the replacement part maintains identical electrical ratings for reverse voltage and forward current.

BAT6804WE6327BTSA1BAT6804WE6327BTSA1

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