BFL4001-1EX

$0.90

Description：MOSFET N-CH 900V 6.5A TO220-3 FP
Series：-
Mfr：onsemi
Package：Bulk,Bulk

SKU:2b7749ac3741 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BFL4001-1EX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 6.5A TO220-3 FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BFL4001-1EX

Description：MOSFET N-CH 900V 6.5A TO220-3 FP
Series：-
Mfr：onsemi
Package：Bulk,Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.7Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：850 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 37W (Tc)
Operating Temperature：150°C (TA)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3 Fullpack/TO-220F-3SG
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for BFL4001-1EX

BFL4001-1EX

Single FETs, MOSFETs Overview

The BFL4001-1EX is an N-channel MOSFET from onsemi, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 6.5 A at ambient temperature. The device operates with a gate drive voltage of 10 V and exhibits a maximum on-resistance (Rds(on)) of 2.7 ohms when tested at 3.25 A. Key electrical characteristics include a gate charge (Qg) of 44 nC at 10 V and an input capacitance (Ciss) of 850 pF at 30 V. The component supports a junction temperature up to 150°C and offers power dissipation ratings of 2 W at ambient temperature and 37 W at case temperature.

Single FETs, MOSFETs Feature Summary

High breakdown voltage capability suitable for demanding power environments
Robust thermal performance with significant case-level power dissipation capacity
Low gate charge characteristics facilitating efficient switching operations

Single FETs, MOSFETs Applications

High-voltage power supply circuits
Industrial motor control systems
Inverter topologies requiring robust switching elements

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '1EX' against official datasheets to confirm package type and marking details. Confirm end-of-life status and availability of qualified replacement components before finalizing design implementations. Ensure sourcing channels provide authentic parts with traceable documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling in through-hole configurations. Evaluate thermal management requirements carefully due to the relatively high on-resistance compared to lower voltage counterparts. Ensure gate drive circuitry can support the specified 10 V drive level for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the BFL40 series of high-voltage MOSFETs manufactured by onsemi. These devices are engineered for reliability in harsh electrical environments. The TO-220-3 Fullpack package provides mechanical stability and thermal conductivity essential for power electronics applications.