BMS3004-1E

Description：MOSFET P-CH 75V 68A TO220F-3SG
Series：-
Mfr：onsemi
Package：Tube

SKU:4945a9e84161 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BMS3004-1E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 75V 68A TO220F-3SG. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BMS3004-1E

Description：MOSFET P-CH 75V 68A TO220F-3SG
Series：-
Mfr：onsemi
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：68A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 34A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13400 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3SG
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for BMS3004-1E

BMS3004-1E

Single FETs, MOSFETs Overview

The BMS3004-1E is a P-Channel Power MOSFET manufactured by onsemi, housed in a TO-220F-3SG through-hole package. It features a drain-source voltage rating of -75V and a continuous drain current of -68A at ambient temperature. The device exhibits a maximum on-resistance of 8.5mΩ. Thermal performance includes a power dissipation capacity of 2W at ambient temperature and 40W at case temperature. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

P-Channel enhancement mode construction for high-side switching applications
Low on-resistance design to minimize conduction losses
Through-hole TO-220F-3SG package for robust thermal management

Single FETs, MOSFETs Applications

General purpose power switching
Load control circuits
Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '1E' during procurement to ensure correct variant identification. Confirm that the TO-220F-3SG package matches your PCB footprint requirements. Check datasheet specifications for thermal resistance values relevant to your heatsinking strategy. Ensure voltage and current ratings exceed peak operational demands with appropriate safety margins.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with -75V capability and high current handling is required. The TO-220F-3SG package suits applications needing reliable through-hole mounting and efficient heat dissipation. Evaluate the 8.5mΩ on-resistance against efficiency targets. Consider the 150°C maximum junction temperature for high-temperature environments.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's discrete power MOSFET portfolio. It is designed for general usage across various electronic systems. The TO-220F-3SG form factor provides a balance between electrical performance and mechanical durability. It serves as a standard solution for medium-power switching tasks requiring proven reliability.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configuration and voltage/current ratings. Verify that thermal characteristics and package dimensions are compatible with existing board layouts.