Single FETs, MOSFETs BS108G product image

BS108G

  • Description:MOSFET N-CH 200V 250MA TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:d46c5032e82c Category: Brand:

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BS108G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 200V 250MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS108G

  • Description:MOSFET N-CH 200V 250MA TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2V, 2.8V
  • Rds On (Max) @ Id, Vgs:8Ohm @ 100mA, 2.8V
  • Vgs(th) (Max) @ Id:1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):350mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92 (TO-226)
  • Package / Case:TO-226-3, TO-92-3 Long Body

Single FETs, MOSFETs datasheet and documents for BS108G

BS108G

Single FETs, MOSFETs Overview

The BS108G is a small signal N-channel MOSFET manufactured by onsemi, housed in a TO-92 package. It features a drain-source voltage rating of 200 V and a continuous drain current of 250 mA. The device is designed as a logic-level transistor with a maximum gate-source voltage of 3.0 V, enabling direct interface with standard logic families. Key electrical characteristics include low drive requirements and inherent current sharing capability, making it suitable for high-speed switching applications such as line drivers, relay drivers, and CMOS logic interfaces.

Single FETs, MOSFETs Feature Summary

  • Logic-level operation allowing direct drive from standard logic families
  • High-voltage capability with 200 V drain-source breakdown
  • Inherent current sharing permits easy paralleling of multiple devices

Single FETs, MOSFETs Applications

  • Line drivers
  • Relay drivers
  • CMOS logic interfacing
  • Microprocessor or TTL to high voltage interface circuits
  • High voltage display drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' indicates lead-free packaging compliance when sourcing. Confirm the manufacturer is onsemi, as this part number has historical precedence with other vendors like Motorola and NXP. Ensure the datasheet revision matches the required specifications for your design. Check for RoHS and REACH compliance documentation provided by the supplier. Validate the TO-92 package availability against your assembly requirements.

Single FETs, MOSFETs Selection Notes

Select the BS108G when a high-voltage N-channel switch is required with minimal gate drive current. Its 200 V rating distinguishes it from standard 60 V logic FETs. The 250 mA current capacity suits low-power switching tasks. Consider its parasitic capacitances for high-frequency performance. The TO-92 package limits thermal dissipation compared to surface-mount options. Verify that the 3.0 V max VGS requirement aligns with your system's logic levels.

Single FETs, MOSFETs Part Context

This component belongs to the family of small-signal power MOSFETs designed for general-purpose switching. It serves as a bridge between low-voltage control logic and higher-voltage loads. The TO-92 through-hole package facilitates prototyping and low-volume production. Similar parts in this category often prioritize voltage rating over current handling. The logic-level gate threshold simplifies circuit design by removing the need for dedicated gate drivers.

Single FETs, MOSFETs Replacement Considerations

BS107: Similar 200 V N-channel MOSFET but may differ in gate threshold specifics. 2N7000: Common alternative but rated for only 60 V, unsuitable for 200 V applications. L2N7003LT1: Lower voltage rating (60 V) and different current capacity. Verify pinout compatibility and thermal characteristics before substitution.

BS108GBS108G

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