BS170

$0.30

Description：MOSFET N-CH 60V 500MA TO92-3
Series：-
Mfr：onsemi
Package：Bulk

SKU:327b9bfb110f Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BS170 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 500MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS170

Description：MOSFET N-CH 60V 500MA TO92-3
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA)

Single FETs, MOSFETs datasheet and documents for BS170

BS170

Single FETs, MOSFETs Overview

The BS170 is an N-channel enhancement mode field effect transistor manufactured using onsemi’s proprietary high cell density DMOS technology. It provides rugged, reliable, and fast switching performance with minimized on-state resistance. The device supports up to 500 mA DC drain current and features a 60 V drain-source voltage rating. Key electrical parameters include a gate threshold voltage of 3 V max at 1 mA, a static drain-source on-resistance of 5 Ω max at 200 mA and 10 V, and a maximum power dissipation of 830 mW at 25°C ambient temperature.

Single FETs, MOSFETs Feature Summary

High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability

Single FETs, MOSFETs Applications

Small servo motor control
Power MOSFET gate drivers
Other switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the BS170 family includes TO-92 bulk and tape & reel options. Confirm lead form specifications (straight vs. forming) against the ordering information table. Check for discontinued status on older suffixes like -D74Z or -D75Z before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select the BS170 for low voltage, low current applications requiring robust switching capabilities. Ensure the application operates within the 60 V drain-source voltage limit and 500 mA continuous current constraint. Consider thermal derating above 25°C when calculating power dissipation limits for the chosen package configuration.

Single FETs, MOSFETs Part Context

The BS170 belongs to a family of N-channel enhancement mode FETs produced by onsemi. It shares design characteristics with the MMBF170 but differs in packaging, offering TO-92 through-hole options compared to the SOT-23 surface mount variant. Both utilize the same underlying DMOS technology for consistent electrical performance across package types.

Single FETs, MOSFETs Replacement Considerations

MMBF170 is a direct functional equivalent available in SOT-23 packaging. Verify pinout compatibility if substituting between TO-92 and SOT-23 packages, as physical dimensions and lead configurations differ significantly despite identical electrical ratings.