BS170FTA

Single FETs, MOSFETs Overview

The BS170FTA is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 150 uA. Its gate-source voltage range spans from -20 V to +20 V, with a typical threshold voltage (Vgs th) of 3 V. The on-resistance (Rds On) is specified at 5 Ohms. Power dissipation capability is rated at 330 mW. Operating temperatures range from -55 C to +150 C, with typical switching delays of 10 ns for both turn-on and turn-off.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode operation for low-side switching applications
• High voltage tolerance with 60 V drain-source breakdown capability
• Compact SOT-23-3 surface-mount packaging for space-constrained designs
• Wide operating temperature range suitable for industrial environments

Single FETs, MOSFETs Applications

• Low-current signal switching circuits
• Battery protection circuits requiring high voltage isolation
• General-purpose logic level interface applications
• Power management control stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'FTA' against the manufacturer's official datasheet to confirm tape and reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the ordering code with Diodes Incorporated documentation to validate the exact packaging quantity and handling instructions before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a small-signal N-channel MOSFET with 60 V rating is required. The low continuous current limit of 150 uA restricts usage to signal switching rather than power delivery. Consider the 5 Ohm on-resistance for voltage drop calculations in sensitive analog paths. Verify that the SOT-23-3 footprint matches the PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to the BS170F series of N-channel MOSFETs from Diodes Incorporated. It shares functional similarities with other small-signal transistors but is distinguished by its specific voltage ratings and surface-mount configuration. The series is designed for general-purpose switching tasks where compact size and reliable performance are prioritized over high current capacity.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent N-channel MOSFETs with matching 60 V Vds and SOT-23-3 packages. Verify pinout compatibility and electrical parameter overlaps before replacing. Generic replacements may differ in threshold voltage or on-resistance, affecting circuit performance.