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BS170G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 500MA TO92-3. Review the specifications below when checking this part for your BOM.
The BS170G is an N-channel enhancement mode MOSFET manufactured by onsemi, housed in a TO-92-3 through-hole package. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 500mA at 25°C. The device exhibits a maximum gate-source threshold voltage of 3V at 1mA drain current and a typical drain-source on-resistance of 5Ω at 200mA with 10V gate drive. Maximum power dissipation is rated at 830mW at 25°C ambient temperature, with a maximum operating junction temperature of 150°C.
Verify the specific suffix 'G' against official onsemi documentation to confirm compliance with halogen-free or specific RoHS directives, as generic BS170 listings may vary in environmental certification status. Ensure the ordering part number matches the exact datasheet revision required for your design specifications.
Select this component when a low-cost, through-hole N-channel MOSFET is required for low-current switching tasks. Consider the 5Ω on-resistance limit for efficiency requirements and ensure the thermal management strategy accommodates the 830mW dissipation rating within the TO-92 package constraints.
This part belongs to the BS170 family of small-signal MOSFETs from onsemi. It serves as a legacy alternative to newer surface-mount devices in designs requiring robust through-hole compatibility. The device is widely recognized for its use in educational kits and simple electronic projects due to its availability and standard pinout.
Direct substitutes include the BS170 and BS170_NL. Verify pinout compatibility and electrical parameter tolerances before substitution.
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