Single FETs, MOSFETs BS170PSTOA product image

BS170PSTOA

$0.19
  • Description:MOSFET N-CH 60V 270MA E-LINE
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:746cb4e380b6 Category: Brand:

  
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BS170PSTOA is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 270MA E-LINE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS170PSTOA

  • Description:MOSFET N-CH 60V 270MA E-LINE
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id:3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):625mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:E-Line (TO-92 compatible)
  • Package / Case:E-Line-3

Single FETs, MOSFETs datasheet and documents for BS170PSTOA

BS170PSTOA

Single FETs, MOSFETs Overview

The BS170PSTOA is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a SOT-23 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 500 mA. Key electrical characteristics include a maximum on-resistance of 2.5 ohms at a gate-source voltage of 4.5 V, with a threshold voltage range between 1 V and 2.5 V. The component supports a maximum power dissipation of 350 mW and operates within a temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode operation for switching applications
  • Silicon-based construction ensuring reliable performance
  • Surface-mount SOT-23 packaging for compact circuit integration

Single FETs, MOSFETs Applications

  • Low-side switching circuits
  • General-purpose signal switching
  • Battery protection modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix PSTOA against official Diodes Incorporated documentation to confirm exact binning or testing criteria. Ensure the ordering part number matches the required package variant and that RoHS compliance details align with project specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low-power switching tasks requiring a small footprint. Evaluate the 2.5 ohm on-resistance against thermal constraints for the intended load current. Confirm that the 60 V breakdown voltage provides adequate margin for the application's supply voltage.

Single FETs, MOSFETs Part Context

This part belongs to the BS170 family of N-channel MOSFETs produced by Diodes Incorporated. These devices are designed as general-purpose transistors suitable for various consumer and industrial electronics. The PSTOA suffix denotes the specific tape-and-reel packaging configuration for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the 60 V rating, 500 mA current capacity, and SOT-23 package dimensions to ensure functional compatibility.

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