Single FETs, MOSFETs BSB012N03LX3GXUMA1 product image

BSB012N03LX3GXUMA1

$1.12
  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:5039efb54d21 Category: Brand:

  
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BSB012N03LX3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB012N03LX3GXUMA1

  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for BSB012N03LX3GXUMA1

BSB012N03LX3GXUMA1

Single FETs, MOSFETs Overview

The BSB012N03LX3GXUMA1 is an N-channel Power-MOSFET from Infineon Technologies, utilizing OptiMOS3 technology. It features a VDSS of 30 V and an RDS(on) of 1.2 mΩ at VGS = 10 V. The device supports a continuous drain current (ID) of 70 A at Tc = 100 °C, with a pulsed drain current (IDM) of 280 A. It is housed in a PG-TO263-3 package and operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • OptiMOS3 technology for optimized low on-resistance
  • High thermal performance with robust packaging
  • Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control applications
  • Power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes such as UMA1 against official Infineon documentation to ensure correct tape-and-reel configuration. Confirm that the specific lot date code meets project requirements, as manufacturing cycles may vary. Cross-reference the datasheet revision history to ensure compatibility with existing design specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses in the 30 V voltage range. The 1.2 mΩ on-resistance makes it suitable for high-current DC-DC conversion where efficiency is critical. Ensure the thermal management design accounts for the 70 A continuous current rating at elevated case temperatures to maintain reliability within the specified operating range.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS3 family, designed for general-purpose power switching. It integrates advanced trench gate technology to minimize switching losses while maintaining low static resistance. The PG-TO263-3 package provides efficient heat dissipation for surface-mount assembly, supporting compact power supply designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic MOSFET replacements may not match the specific RDS(on) or thermal characteristics required for optimal performance in existing designs.

BSB012N03LX3GXUMA1BSB012N03LX3GXUMA1
$1.12
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