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BSB012N03LX3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
The BSB012N03LX3GXUMA1 is an N-channel Power-MOSFET from Infineon Technologies, utilizing OptiMOS3 technology. It features a VDSS of 30 V and an RDS(on) of 1.2 mΩ at VGS = 10 V. The device supports a continuous drain current (ID) of 70 A at Tc = 100 °C, with a pulsed drain current (IDM) of 280 A. It is housed in a PG-TO263-3 package and operates within a junction temperature range of -55 °C to +175 °C.
Verify the complete part number including suffixes such as UMA1 against official Infineon documentation to ensure correct tape-and-reel configuration. Confirm that the specific lot date code meets project requirements, as manufacturing cycles may vary. Cross-reference the datasheet revision history to ensure compatibility with existing design specifications before finalizing procurement orders.
Select this component for applications requiring low conduction losses in the 30 V voltage range. The 1.2 mΩ on-resistance makes it suitable for high-current DC-DC conversion where efficiency is critical. Ensure the thermal management design accounts for the 70 A continuous current rating at elevated case temperatures to maintain reliability within the specified operating range.
This device belongs to the OptiMOS3 family, designed for general-purpose power switching. It integrates advanced trench gate technology to minimize switching losses while maintaining low static resistance. The PG-TO263-3 package provides efficient heat dissipation for surface-mount assembly, supporting compact power supply designs.
Consult official Infineon substitution guides for verified alternatives. Generic MOSFET replacements may not match the specific RDS(on) or thermal characteristics required for optimal performance in existing designs.
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