BSB012NE2LXIXUMA1

Description：MOSFET N-CH 25V 170A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:d04198075def Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB012NE2LXIXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 170A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB012NE2LXIXUMA1

Description：MOSFET N-CH 25V 170A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5852 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 57W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2, CanPAK M™
Package / Case：3-WDSON

Single FETs, MOSFETs datasheet and documents for BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1

Single FETs, MOSFETs Overview

The BSB012NE2LXIXUMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a maximum drain-source voltage (VDS) of 25 V and a continuous drain current (ID) of 170 A at case temperature. The device offers a maximum on-resistance (RDS(on)) of 1.2 mOhm. It is housed in a DirectFET(M) package, also referred to as CanPAK M or MG-WDSON-2. Thermal performance includes a power dissipation rating of 2.8 W at ambient temperature and 57 W at case temperature. The operating junction temperature range extends from -40°C to +150°C.

Single FETs, MOSFETs Feature Summary

OptiMOS technology for optimized switching performance
Low on-resistance for high efficiency
DirectFET(M) surface mount packaging

Single FETs, MOSFETs Applications

High-current DC-DC converter stages
Motor control applications
Power distribution units

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors. Confirm the specific suffix matches the required package variant. Check lifecycle status as obsolete information may vary by region. Ensure storage conditions comply with moisture sensitivity levels. Validate thermal management requirements against application loads.

Single FETs, MOSFETs Selection Notes

Select based on 25 V voltage rating and 170 A current capability. Consider the 1.2 mOhm RDS(on) for conduction losses. Evaluate the DirectFET(M) package for PCB space constraints. Compare thermal resistance values against heatsinking capabilities. Ensure compatibility with gate drive voltages for optimal switching.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's OptiMOS family of power MOSFETs. It is designed for low-voltage, high-current applications requiring efficient power conversion. The DirectFET(M) package provides robust thermal performance and compact footprint suitable for modern electronic designs.

Single FETs, MOSFETs Replacement Considerations

Public sources indicate this product is obsolete. No verified substitute part numbers are available in the provided documentation. Consult manufacturer channels for end-of-life alternatives.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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