BSB017N03LX3 G

Description：MOSFET N-CH 30V 32A/147A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:97a16365a352 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB017N03LX3 G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 32A/147A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB017N03LX3 G

Description：MOSFET N-CH 30V 32A/147A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：32A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：102 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7800 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 57W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2, CanPAK M™
Package / Case：3-WDSON

Single FETs, MOSFETs datasheet and documents for BSB017N03LX3 G

BSB017N03LX3 G

Single FETs, MOSFETs Overview

The BSB017N03LX3 G is an n-channel OptiMOS™ Power MOSFET designed for high power density and energy efficiency. It features a maximum drain-source voltage of 30 V and a typical on-state resistance of 1.7 mΩ at VGS=10 V. The device supports a continuous drain current of 147 A and a pulsed current of 400 A. Total gate charge is typically 77 nC, with output capacitance at 50 nC. Thermal resistance from junction to case is 1.0 K/W via the bottom surface. Operating temperature ranges from -40 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for high switching frequency DC/DC converters
Features ultra-low gate and output charges for efficient operation
Includes double-sided cooling capability for improved thermal management
Compatible with DirectFET® package MX footprint

Single FETs, MOSFETs Applications

On-board power for servers
Power management for high performance computing
Synchronous rectification
High power density point of load converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified channels. Confirm that the MG-WDSON-2 package matches design requirements. Ensure compliance with RoHS and halogen-free standards as specified in the datasheet. Validate thermal performance against specific PCB layout constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low RDS(on) and fast switching speeds within a 30 V rating. Consider the 1.7 mΩ resistance at VGS=10 V for conduction loss calculations. Evaluate the 1.0 K/W thermal resistance for heat dissipation needs. Ensure gate drive voltages align with the threshold characteristics for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ family, specifically engineered for voltage regulator solutions in servers, datacom, and telecom sectors. It targets demanding requirements for space-efficiency and cost optimization in next-generation computing applications.

Single FETs, MOSFETs Replacement Considerations

Check for compatible alternatives within the OptiMOS™ 30V series. Verify pinout compatibility with the MG-WDSON-2 package. Ensure electrical parameters such as RDS(on) and Qg meet or exceed original specifications.