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BZX84C27_R1_00001 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is DIODE ZENER 27V 410MW SOT23. Review the specifications below when checking this part for your BOM.
The BZX84C27_R1_00001 is a surface mount silicon Zener diode from the BZX84C2V4 series manufactured by Panjit International Inc. It features a planar die construction and operates within a voltage range of 2.4 to 75 Volts with a maximum power dissipation of 410 mWatt at 25°C. The nominal Zener voltage for this specific model is 27 V, with a tolerance range of 25.65 V to 28.35 V. Electrical characteristics include a maximum Zener impedance (ZZT) of 80 Ohms at a test current of 5.0 mA, and a maximum reverse leakage current of 0.1 µA at 18.9 V. The device is housed in an SOT-23 molded plastic case and supports an operating junction temperature range from -55°C to +150°C.
Verify component authenticity by cross-referencing the manufacturer part number BZX84C27_R1_00001 with official Panjit datasheets. Confirm that the package type matches the specified SOT-23 configuration and ensure compliance with required environmental standards such as RoHS 2.0 before integration into production lines.
Select this component when a precise 27 V reference is required in compact surface mount designs. The 410 mW power rating allows for moderate current handling, while the tight ±5% voltage tolerance ensures stability in sensitive analog circuits. Ensure thermal management aligns with the specified derating curves for high-temperature environments.
This component belongs to the BZX84C2V4 series of surface mount silicon Zener diodes produced by Panjit International Inc. The series covers a broad spectrum of voltages from 2.4 V to 75 V, all sharing common mechanical dimensions and electrical testing conditions. The R1 suffix typically denotes specific packaging or tape-and-reel configurations used for high-volume automated manufacturing.
BZX84C27W_R1_00001
The maximum reverse leakage current is 0.1 µA when measured at a reverse voltage of 18.9 V.
The device requires steady-state power derating above 25°C, with a typical thermal resistance from junction to ambient of 500 °C/W on a minimum pad layout.
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