CY7C1420JV18-250BZI

Memory IC Overview

The CY7C1420JV18-250BZI is a 36-Mbit DDR-II SRAM with a 1M x 36 organization. It supports a maximum clock frequency of 250 MHz and operates on a 1.8V core supply. The device utilizes a 165-ball FBGA package measuring 15 x 17 x 1.4 mm. It features a 2-word burst architecture, synchronous internally self-timed writes, and a Delay Lock Loop for accurate data placement.

Memory IC Feature Summary

• Supports double data rate interfaces with two input clocks for precise timing control
• Includes echo clocks to simplify data capture in high-speed systems
• Features programmable output impedance via an external resistor connection
• Incorporates JTAG 1149.1 compatible test access port for boundary scan testing

Memory IC Applications

• High-bandwidth networking equipment
• Telecommunications infrastructure
• Industrial automation controllers
• Test and measurement instruments

Memory IC Procurement Notes

Verify the specific suffix BZI indicates lead-free packaging and industrial temperature range compliance against the manufacturer's current ordering guide. Confirm RoHS status and ensure the 165-ball FBGA footprint matches the target PCB design. Check for any end-of-life notifications or alternative recommendations from Infineon Technologies.

Memory IC Selection Notes

Select this component when a 36-bit wide memory interface is required at 250 MHz speeds. The DDR-II architecture reduces address bus frequency compared to QDR devices. Ensure the system design accommodates the 1.8V HSTL I/O levels and provides separate K/K and C/C clock pairs for optimal performance.

Memory IC Part Context

This part belongs to the Cypress/Infineon CY7C14xxKV18 family of DDR-II SRAMs. It shares the same physical package and basic interface logic as the CY7C1416, CY7C1418, and CY7C1427 variants, differing primarily in density and data width organization.

Memory IC Replacement Considerations

CY7C1420KV18-250BZXI