DD800S33K2CB3S2NDSA1

Description：DIODE MOD GP 3300V 800A AIHV1303
Series：-

SKU:19644b265f7b Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

DD800S33K2CB3S2NDSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MOD GP 3300V 800A AIHV1303. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD800S33K2CB3S2NDSA1

Description：DIODE MOD GP 3300V 800A AIHV1303
Series：-
Mfr：Infineon Technologies
Package：Tray
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：3300 V
Current - Average Rectified (Io) (per Diode)：800A (DC)
Voltage - Forward (Vf) (Max) @ If：3.5 V @ 800 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：A-IHV130-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DD800S33K2CB3S2NDSA1

DD800S33K2CB3S2NDSA1

Diode Arrays Overview

The DD800S33K2CB3S2NDSA1 is a Diode, Inverter IGBT module with a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 800 A. It features a maximum power dissipation of 1600 kW at Tvj = 125°C and an I²t value of 220 kA²s. The module has a thermal resistance from junction to case of 26.0 K/kW per diode and 6.00 K/kW for the module. It includes an AlSiC baseplate, AlN internal insulation, and a creepage distance of 32.2 mm.

Diode Arrays Feature Summary

Utilizes an AlSiC baseplate material for enhanced mechanical robustness and thermal performance.
Features AlN internal basic insulation compliant with protection class 1 standards.
Designed for high-voltage applications with a 6.0 kV isolation test voltage.

Diode Arrays Applications

High-power industrial traction inverters
Wind power converters
Photovoltaic energy systems

Diode Arrays Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to ensure correct configuration. Confirm compliance with RoHS and REACH requirements before procurement. Ensure that the supplier provides valid traceability documents and original manufacturer packaging to guarantee component authenticity.

Diode Arrays Selection Notes

Select this module for applications requiring high voltage stability and robust thermal management. Consider the specific mounting torque requirements for M6 screws during installation. Evaluate the dynamic data in conjunction with compatible IGBT modules like the FZ800R33KF2C for accurate switching loss calculations.

Diode Arrays Part Context

This component belongs to the Diodes IGBT EC3 Module series by Infineon Technologies. It is designed for high-power density applications, offering reliable performance in demanding environments. The module integrates advanced semiconductor technology to support efficient power conversion in modern electrical systems.

Diode Arrays Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume cross-compatibility with other high-voltage modules without verifying pinout and thermal specifications.