DDB2265-000

RF Diode Overview

The DDB2265-000 is a P-type silicon Schottky barrier detector diode designed for K-band applications. It features beam-lead construction with an outline drawing of 491-006. The device operates within a reverse voltage limit of 2 V and a forward current rating of 100 mA, supporting RF input power up to 75 mW at 25 °C. Electrical specifications include a tangential signal sensitivity (TSS) of -50 dBm measured at a bias of 30 μA. Video resistance ranges from 800 Ω to 1200 Ω, while junction capacitance at 0 V is typically 0.10 pF. Forward voltage at 1 mA is specified as 300–450 mV, and breakdown voltage at 10 μA is 24.15 V.

RF Diode Feature Summary

• Utilizes P-type silicon substrate to achieve superior low 1/f noise characteristics suitable for high-sensitivity detection.
• Features planar passivated beam-lead construction optimized for microwave integrated circuit mounting.
• Designed with large bond pads to ensure mechanical reliability during wire bonding and automated assembly.

RF Diode Applications

• Microwave integrated circuit (MIC) detectors
• Doppler mixers requiring low noise performance
• High-sensitivity video detection systems

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact package type and material composition. Confirm that the required electrical parameters align with the absolute maximum ratings provided in the datasheet. Ensure handling procedures adhere to industry-standard electrostatic discharge precautions to prevent damage to the sensitive beam-lead structure.

RF Diode Selection Notes

Select this component when designing K-band systems requiring low noise figure and high sensitivity. The P-type silicon variant is preferred over N-type options for applications prioritizing low 1/f noise performance. Verify that the operating environment remains within the specified temperature range of -55 °C to +150 °C to maintain device reliability and parameter stability.

RF Diode Part Context

This part belongs to Skyworks' series of silicon Schottky barrier diodes intended for Ka-band and lower frequency applications. These unmounted beam-lead devices are categorized by tangential signal sensitivity for detector use across S, X, Ku, and K bands. The series offers universal chip designs compatible with various customer substrates and specialized mounting techniques.

RF Diode Replacement Considerations

The CDB7619-000 is listed as a parameter-equivalent alternative within the same product family. Both parts share similar K-band operation and P-type construction. Verify compatibility regarding outline drawings and specific electrical tolerances before substitution.

RF Diode FAQ

What is the recommended bias current for optimal TSS performance?

For the DDB2265-000, a bias current of 30 μA is specified for achieving the typical tangential signal sensitivity of -50 dBm.

How does the choice of silicon type affect performance?

P-type silicon, used in this part, provides superior 1/f noise characteristics compared to N-type materials, making it ideal for Doppler mixers and high-sensitivity detectors.

What packaging format is used for these beam-lead devices?

Beam-lead devices like the DDB2265-000 are typically provided in gel-pack carriers, whereas bare die chips are supplied in waffle packs.