Analog Switches, Multiplexers, Demultiplexers DG444BDN-T1-E4 product image

DG444BDN-T1-E4

$3.09
  • Description:IC SWITCH SPST-NCX4 80OHM 16QFN
  • Series:-

SKU:a54115c19499 Category: Brand:

  
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DG444BDN-T1-E4 is listed in the Analog Switches, Multiplexers, Demultiplexers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC SWITCH SPST-NCX4 80OHM 16QFN. Review the specifications below when checking this part for your BOM.

Analog Switches, Multiplexers, Demultiplexers specifications for DG444BDN-T1-E4

  • Description:IC SWITCH SPST-NCX4 80OHM 16QFN
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Switch Circuit:SPST - NC
  • Multiplexer/Demultiplexer Circuit:1:01
  • On-State Resistance (Max):80Ohm
  • Channel-to-Channel Matching (ΔRon):-
  • Voltage - Supply, Single (V+):13V ~ 36V
  • Voltage - Supply, Dual (V±):±7V ~ 22V
  • Switch Time (Ton, Toff) (Max):300ns, 200ns
  • -3db Bandwidth:-
  • Charge Injection:1pC
  • Channel Capacitance (CS(off), CD(off)):5pF, 5pF
  • Current - Leakage (IS(off)) (Max):500pA
  • Crosstalk:-95dB @ 100kHz
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:16-VQFN Exposed Pad
  • Supplier Device Package:16-QFN (4x4)
  • Number of Circuits:4
  • Grade:-
  • Qualification:-

Analog Switches, Multiplexers, Demultiplexers datasheet and documents for DG444BDN-T1-E4

DG444BDN-T1-E4

Analog Switches, Multiplexers, Demultiplexers Overview

The DG444BDN-T1-E4 is a monolithic quad SPST CMOS analog switch manufactured by Vishay Siliconix. It operates within a single supply range of 13 V to 36 V or dual supplies of ±7 V to ±22 V. The device features a typical on-resistance of 45 Ω with a maximum of 80 Ω at room temperature, and up to 95 Ω across the full operating temperature range. Switching speeds include a turn-on time of 300 ns maximum and a turn-off time of 200 ns maximum. It utilizes a 16-pin QFN (4 x 4 mm) package and supports an operating temperature range from -40 °C to +85 °C.

Analog Switches, Multiplexers, Demultiplexers Feature Summary

  • High-speed switching action designed for low error signal transmission
  • Minimized charge injection suitable for precision sample-and-hold circuits
  • TTL and CMOS-compatible logic control interface

Analog Switches, Multiplexers, Demultiplexers Applications

  • Data acquisition systems
  • Communication systems
  • Automatic test equipment
  • Medical instrumentation
  • Audio switching

Analog Switches, Multiplexers, Demultiplexers Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to soldering. Validate that the ordering suffix matches the required packaging format.

Analog Switches, Multiplexers, Demultiplexers Selection Notes

Select this component when high-speed analog signal routing is required alongside low power consumption. Verify that the system voltage does not exceed the absolute maximum ratings of 44 V between supplies. Ensure the logic input levels align with the specified TTL/CMOS compatibility thresholds for reliable switching operation.

Analog Switches, Multiplexers, Demultiplexers Part Context

This part belongs to the DG444B/DG445B series, which are upgraded versions of the original DG444/DG445 devices. The series utilizes a high-voltage silicon-gate process with an epitaxial layer to prevent latchup. The DG444B specifically provides normally open switches, whereas the DG445B offers normally closed configurations.

Analog Switches, Multiplexers, Demultiplexers Replacement Considerations

DG444BDJ-E3

Analog Switches, Multiplexers, Demultiplexers FAQ

What is the difference between the DG444B and DG445B?

The DG444B contains four normally open (NO) switches, while the DG445B contains four normally closed (NC) switches.

How does the device handle signals exceeding supply rails?

Signals on the source or drain pins exceeding V+ or V- will be clamped by internal diodes. The forward diode current must be limited to the maximum current ratings to prevent damage.

Is the DG444BDN-T1-E4 latchup-proof?

Yes, the device is built using a high-voltage silicon-gate process that includes an epitaxial layer specifically designed to prevent latchup.

DG444BDN-T1-E4DG444BDN-T1-E4
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