RF Diode DME2864-000 product image

DME2864-000

$7.85
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME

SKU:c9ad20604772 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DME2864-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2864-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:3-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2864-000

DME2864-000

RF Diode Overview

The DME2864-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DME series, designed for K and Ka band applications (18.0 to 40.0 GHz). It features a common cathode configuration with a maximum junction capacitance of 0.1 pF at 0 V bias. The device exhibits a typical forward voltage range of 375 to 550 mV at 1 mA current and a series resistance of 18 Ω at 5 mA. Rated for medium drive levels, it supports continuous wave power dissipation of 75 mW per junction and operates within an ambient temperature range of -65°C to +175°C.

RF Diode Feature Summary

  • Utilizes beam-lead design to facilitate bonding to low capacitance junctions
  • Provides close impedance control through narrow spread of capacitance values
  • Offers uniformity suitable for balanced mixer configurations

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • K and Ka band mixers
  • Detectors
  • Modulators
  • High-speed switches

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Skyworks documentation. Ensure handling procedures strictly adhere to electrostatic discharge precautions due to device sensitivity. Confirm that the specific package outline drawing matches the required mechanical integration constraints before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits operating in the K or Ka frequency bands requiring a common cathode topology. The medium drive classification makes it appropriate for applications needing moderate local oscillator power while maintaining low intermodulation distortion. Evaluate the 0.1 pF maximum capacitance to ensure compatibility with high-frequency matching networks.

RF Diode Part Context

This device belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series encompasses singles, pairs, and quads categorized into S, C, X, Ku, K, and Ka bands. The DME designation specifically indicates a medium drive level N-type device within this comprehensive family of microwave components.

RF Diode Replacement Considerations

DME2864-000 is functionally equivalent to other DME series common cathode devices such as DME2831-000 for K/Ka band applications. Verify that any substitute maintains the same beam-lead package dimensions and electrical characteristics including capacitance and forward voltage ranges.

DME2864-000DME2864-000
$7.85
Buy Now

Recent News