DXTN10060DFJBQ-7

Single Bipolar Transistors Overview

The DXTN10060DFJBQ-7 is a 60V NPN low saturation transistor manufactured by Diodes Incorporated. It utilizes an advanced process to deliver high performance in a U-DFN2020-3 (Type B) package with a nominal height of 0.6mm. The device supports a continuous collector current of 4A and a peak pulse current of 6A, with a maximum saturation voltage of 100mV at 1A. It features a thermal resistance of 83°C/W and operates within a temperature range of -55°C to +175°C.

Single Bipolar Transistors Feature Summary

• Advanced process capability maximizes performance for high power density applications
• Low profile 0.6mm package offers a footprint 50% smaller than SOT23 equivalents
• Efficient thermal dissipation with junction-to-ambient resistance 60% lower than SOT23
• Rated for operation up to +175°C suitable for high temperature environments

Single Bipolar Transistors Applications

• Automotive Systems
• MOSFET Gate Driving
• DC-DC Converters
• Motor Control
• Power Switches

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the required reel size and tape width before procurement. Confirm that the 'BQ' designation aligns with automotive change control requirements and AEC-Q101 qualification standards. Ensure the U-DFN2020-3 (Type B) package dimensions match the target PCB layout constraints. Validate compliance with IATF16949:2016 manufacturing facility certifications if applicable to the supply chain.

Single Bipolar Transistors Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SOT23 packages while maintaining high current handling capabilities. The low saturation voltage makes it suitable for efficient power switching where minimizing conduction losses is critical. Consider the +175°C rating for designs operating in elevated ambient temperatures or requiring robust thermal margins without excessive heatsinking.

Single Bipolar Transistors Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-compliant bipolar transistors designed for compact power management solutions. It is specifically qualified under AEC-Q101 standards and manufactured in IATF16949:2016 certified facilities. The device is PPAP capable, ensuring suitability for rigorous automotive supply chain requirements and specific change control protocols.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.