E4D20120D

Diode Arrays Overview

The E4D20120D is a 1200 V, 20 A Silicon Carbide Schottky Diode in a TO-247-3 package. It utilizes 4th generation SiC merged PIN Schottky technology and is AEC-Q101 qualified. Key electrical parameters include a maximum repetitive peak reverse voltage of 1200 V, a continuous forward current rating of 20 A at 100 °C case temperature, and a typical forward voltage of 1.5 V at 10 A. The device features zero reverse recovery current, a total capacitive charge of 50 nC, and an operating junction temperature range from -55 to +175 °C.

Diode Arrays Feature Summary

• Fourth-generation SiC merged PIN Schottky technology
• AEC-Q101 qualification with PPAP capability
• Zero reverse recovery current for high-frequency operation
• Humidity resistant construction

Diode Arrays Applications

• Boost diodes in PFC or DC/DC stages
• Free wheeling diodes in inverter stages
• AC/DC converters
• Automotive and traction power conversion
• PV inverters

Diode Arrays Procurement Notes

Verify the specific datasheet revision (Rev. 2, September 2023) when sourcing components to ensure alignment with updated branding and package drawings. Confirm that the received units match the Wolfspeed specifications regarding the TO-247-3L package outline and solder pad layout requirements.

Diode Arrays Selection Notes

Select this component for designs requiring unipolar rectification with minimal switching losses. Its positive temperature coefficient allows for parallel operation without thermal runaway. Ensure the application environment accommodates the specified humidity resistance and verify thermal management capabilities against the provided junction-to-case thermal resistance values.

Diode Arrays Part Context

This discrete diode belongs to Wolfspeed's fourth-generation silicon carbide product family. It is designed to replace traditional bipolar rectifiers in high-efficiency power systems. The TO-247-3 package facilitates integration into standard industrial and automotive power modules.

Diode Arrays Replacement Considerations

E4D20120A

Diode Arrays FAQ

Does the E4D20120D exhibit reverse recovery charge?

No, it is a majority carrier diode featuring zero reverse recovery current.

What is the maximum dV/dt ruggedness rating?

The device supports a dV/dt of 250 V/ns between 0 and 960 V.

Is this component suitable for outdoor environments?

Yes, the datasheet lists it as ideal for outdoor environments due to its humidity resistance.