FDG410NZ

Single FETs, MOSFETs Overview

The FDG410NZ is an N-channel PowerTrench MOSFET manufactured by onsemi. It features a 20V drain-source voltage rating and supports a continuous drain current of 9.5A at 25°C. The device utilizes a 6-MicroFET (2x2) surface-mount package with a bare thermal pad. Key electrical parameters include a maximum gate-source voltage of ±8V, a gate charge of 14nC at 4.5V, and an input capacitance of 1080pF at 10V. The component operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.4W.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode MOSFET technology
• PowerTrench architecture for low on-resistance
• Surface-mount 6-MicroFET package design

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Load switching applications
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix 'NZ' aligns with specific packaging or compliance requirements defined in the datasheet. Ensure compatibility with the intended PCB footprint and thermal management strategy for the 6-MicroFET package. Cross-reference ordering information with authorized distributors to confirm availability and authenticity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low-voltage, high-current switching capabilities. The 20V rating suits low-side or high-side configurations in 5V or 12V systems. Consider the 6-MicroFET package for space-constrained layouts. Evaluate thermal performance based on the 2.4W dissipation limit and the need for adequate copper area connected to the exposed pad for heat sinking.

Single FETs, MOSFETs Part Context

This device belongs to the onsemi PowerTrench family of N-channel MOSFETs. These components are engineered for general-purpose power switching applications. The series emphasizes efficiency through optimized trench gate technology. The FDG410NZ specifically targets compact power solutions where small form factor and reliable switching characteristics are required.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter margins when considering cross-references from other manufacturers. Ensure any substitute device meets the same voltage, current, and package specifications.