FDMS0308AS

$0.74

Description：MOSFET N-CH 30V 24A/49A 8PQFN
Series：PowerTrench®, SyncFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:69b5db0c256f Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDMS0308AS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 24A/49A 8PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDMS0308AS

Description：MOSFET N-CH 30V 24A/49A 8PQFN
Series：PowerTrench®, SyncFET™
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 24A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PQFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for FDMS0308AS

FDMS0308AS

Single FETs, MOSFETs Overview

The FDMS0308AS is an N-Channel PowerTrench SyncFET manufactured by onsemi. It features a maximum drain-source breakdown voltage of 30 V and continuous drain currents up to 49 A at case temperature or 24 A at ambient temperature. The device achieves a low static drain-to-source on-resistance, with a maximum of 2.8 mΩ at VGS = 10 V and ID = 24 A, or 3.5 mΩ at VGS = 4.5 V and ID = 21 A. Total gate charge is specified at 47 nC under standard test conditions. The component operates within a junction temperature range of -55°C to +150°C and utilizes the Power 56 (8-PQFN) surface-mount package.

Single FETs, MOSFETs Feature Summary

Integrates a monolithic Schottky body diode to minimize reverse recovery losses and enhance switching efficiency in synchronous applications.
Combines advanced silicon technology with optimized packaging to deliver low on-resistance while maintaining excellent thermal performance.
Features robust MSL1 package design and undergoes 100% Unclamped Inductive Load (UIL) testing for reliability assurance.

Single FETs, MOSFETs Applications

Synchronous rectifier for DC/DC converters
Low side switch for notebook Vcore and GPU power stages
Networking point of load low side switch
Telecom secondary side rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific part number suffix against current manufacturer databases, as legacy Fairchild identifiers may have been updated to ON Semiconductor naming conventions during system integration. Confirm compliance documentation status, including RoHS and REACH declarations, directly through official channels prior to procurement to ensure alignment with current regulatory requirements.

Single FETs, MOSFETs Selection Notes

Evaluate the device based on the required gate drive voltage, as on-resistance specifications vary between 4.5 V and 10 V logic levels. Consider the thermal resistance characteristics and available copper pad area for heat dissipation when designing the PCB layout. Ensure the application's peak current demands remain within the unclamped inductive switching limits defined in the datasheet.

Single FETs, MOSFETs Part Context

This component belongs to the PowerTrench SyncFET family, designed specifically for high-efficiency power conversion systems. The series integrates MOSFETs with embedded Schottky diodes to replace discrete parallel diode configurations, thereby reducing board space and improving overall circuit performance in modern power management designs.