FDMS8027S

Single FETs, MOSFETs Overview

The FDMS8027S is an N-channel enhancement mode MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 30 V and a continuous drain current of 70 A. The device utilizes Power 56 surface-mount packaging with eight pins, measuring 6 mm in width, 5 mm in length, and 1.05 mm in height. Key electrical parameters include a maximum drain-source on-resistance of 6.8 mΩ, a typical gate charge of 23 nC at 10 V, and a maximum power dissipation of 36 W. The component operates within a temperature range of -55 °C to +150 °C, with a maximum gate-source voltage rating of ±20 V.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode configuration for efficient switching applications
• Power 56 surface-mount package design for compact integration
• Integrated body diode functionality within the single-chip structure

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Synchronous rectification systems
• Motor control drives

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Fairchild Semiconductor or ON Semiconductor, noting that Fairchild has been acquired by ON Semiconductor. Confirm the specific part number FDMS8027S matches the required Power 56 package and 30 V rating. Ensure compatibility with the intended thermal management requirements given the 36 W power dissipation limit. Check for any recent product change notifications regarding pinout or marking updates.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current solution is required in a small form factor. The 6.8 mΩ on-resistance supports high-efficiency power conversion. Consider the 70 A current capability against the actual circuit load and thermal constraints. The Power 56 package offers a balance between current handling and board space efficiency compared to larger through-hole options.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench SyncFET family from Fairchild Semiconductor, designed for high-efficiency power management. The technology combines advanced silicon processes with optimized packaging to minimize conduction losses. As part of the broader MOSFET portfolio, it targets applications demanding robust performance in compact power stages.