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FDN335N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 20V 1.7A SUPERSOT3. Review the specifications below when checking this part for your BOM.
The FDN335N is an N-channel enhancement-mode MOSFET from the PowerTrench series, manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 1.7 A. The device utilizes advanced Trench technology to achieve a low on-resistance of 70 mΩ at Vgs = 4.5 V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 500 mW. The typical gate charge is 3.5 nC, and the forward voltage is 1.2 V. The component is housed in a surface-mount SOT-23 package with three pins.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical characteristics and packaging options. Ensure the component meets required environmental standards for the intended deployment environment. Cross-reference the part number with authorized distributors to confirm authenticity and traceability before finalizing procurement decisions.
Select this component for applications requiring low-voltage switching with moderate current capacity. The SOT-23 package suits space-constrained designs. Evaluate thermal management requirements based on the 500 mW power dissipation limit. Confirm that the 20 V breakdown voltage aligns with the system's operational voltage levels.
This device belongs to the PowerTrench family of MOSFETs, designed for efficiency and performance. It serves as a switching element in low-voltage circuits. The SOT-23 form factor provides a compact solution for surface-mount assembly processes commonly used in modern electronics manufacturing.
The maximum drain-source voltage (Vds) is rated at 20 V.
The maximum drain-source on-resistance (Rds(on)) is 70 mΩ when measured at a gate-source voltage of 4.5 V.
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