Single FETs, MOSFETs FDN335N product image

FDN335N

$0.52
  • Description:MOSFET N-CH 20V 1.7A SUPERSOT3
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:feb6e6a83743 Category: Brand:

  
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FDN335N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 20V 1.7A SUPERSOT3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDN335N

  • Description:MOSFET N-CH 20V 1.7A SUPERSOT3
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 155°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for FDN335N

FDN335N

Single FETs, MOSFETs Overview

The FDN335N is an N-channel enhancement-mode MOSFET from the PowerTrench series, manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 1.7 A. The device utilizes advanced Trench technology to achieve a low on-resistance of 70 mΩ at Vgs = 4.5 V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 500 mW. The typical gate charge is 3.5 nC, and the forward voltage is 1.2 V. The component is housed in a surface-mount SOT-23 package with three pins.

Single FETs, MOSFETs Feature Summary

  • Advanced PowerTrench technology minimizes on-resistance while maintaining low gate charge for superior switching performance.
  • Low gate threshold voltage enables efficient drive compatibility.
  • High power and high current handling capabilities suitable for compact designs.

Single FETs, MOSFETs Applications

  • Power management systems
  • Industrial control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical characteristics and packaging options. Ensure the component meets required environmental standards for the intended deployment environment. Cross-reference the part number with authorized distributors to confirm authenticity and traceability before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low-voltage switching with moderate current capacity. The SOT-23 package suits space-constrained designs. Evaluate thermal management requirements based on the 500 mW power dissipation limit. Confirm that the 20 V breakdown voltage aligns with the system's operational voltage levels.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of MOSFETs, designed for efficiency and performance. It serves as a switching element in low-voltage circuits. The SOT-23 form factor provides a compact solution for surface-mount assembly processes commonly used in modern electronics manufacturing.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (Vds) is rated at 20 V.

What is the on-resistance value?

The maximum drain-source on-resistance (Rds(on)) is 70 mΩ when measured at a gate-source voltage of 4.5 V.

FDN335NFDN335N
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