FDP16AN08A0

Single FETs, MOSFETs Overview

The FDP16AN08A0 is an N-Channel Power MOSFET manufactured by onsemi, utilizing the PowerTrench process. It features a maximum drain-source voltage of 75 V and a continuous drain current of 58 A at case temperature of 25°C. The device exhibits a typical on-resistance of 13 mΩ at VGS = 10 V and ID = 58 A. Total gate charge is typically 28 nC at 10 V. It supports single pulse avalanche energy of 117 mJ and operates within a junction temperature range of -55 to 175°C.

Single FETs, MOSFETs Feature Summary

• PowerTrench technology minimizes on-state resistance while maintaining superior switching performance.
• Capable of withstanding high energy pulses in avalanche and commutation modes.
• Low Miller charge and low reverse recovery body diode characteristics.

Single FETs, MOSFETs Applications

• Synchronous rectification for ATX, server, and telecom power supply units
• Battery protection circuits
• Motor drives and uninterruptible power supplies

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as onsemi (Semiconductor Components Industries, LLC), resulting from the Fairchild Semiconductor integration. Confirm the package type is TO-220-3LD (CASE 340AT). Ensure compliance requirements such as lead-free and halide-free status are validated against the specific order revision. Check for any updated ordering suffixes or part number changes due to system integration protocols.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds in low-voltage environments. The 75 V rating suits DC/DC converters and motor control systems. Evaluate thermal management needs based on the 135 W power dissipation capability and 1.11 °C/W junction-to-case thermal resistance. Consider the 58 A continuous current rating relative to the operating case temperature derating curves provided in the datasheet.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of N-Channel enhancement mode power field effect transistors. Originally associated with Fairchild Semiconductor, it is now produced and distributed by onsemi. The product utilizes planar stripe DMOS technology tailored to minimize on-state resistance and provide superior switching performance.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 75 V, ~16 mΩ N-Channel MOSFETs in the TO-220-3 package. Verify pinout compatibility (Gate, Drain, Source) and thermal resistance values before substitution.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy?

The maximum single pulse avalanche energy is 117 mJ, starting at a junction temperature of 25°C.

How does the on-resistance vary with temperature?

The normalized drain-to-source on-resistance increases with junction temperature, reaching approximately 2.5 times its room temperature value at 175°C.