FDP3632

$3.76

Description：MOSFET N-CH 100V 12A/80A TO220-3
Series：PowerTrench®
Mfr：onsemi
Package：Tube

SKU:67d2c4fdc054 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDP3632 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 12A/80A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDP3632

Description：MOSFET N-CH 100V 12A/80A TO220-3
Series：PowerTrench®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for FDP3632

FDP3632

Single FETs, MOSFETs Overview

The FDP3632 is an N-Channel Power MOSFET from the onsemi POWERTRENCH series, housed in a TO-220-3 package. It features a drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 80 A at case temperatures below 111°C. The device exhibits a typical on-resistance (R_DS(ON)) of 7.5 mΩ at V_GS = 10 V and I_D = 80 A, with a maximum of 9 mΩ under the same conditions. Total gate charge (Q_g) is typically 84 nC at V_GS = 10 V. Maximum power dissipation is 310 W at T_C = 25°C, with a junction-to-case thermal resistance (R_θJC) of 0.48 °C/W.

Single FETs, MOSFETs Feature Summary

Low Miller Charge for reduced switching losses
Low Qrr Body Diode to minimize reverse recovery effects
UIS Capability supporting single and repetitive pulse avalanche energy

Single FETs, MOSFETs Applications

Synchronous Rectification
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Ensure the component matches the required thermal management specifications for the intended application environment. Confirm RoHS compliance and material declarations through manufacturer resources before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling at 100 V with low conduction losses. Evaluate thermal performance based on PCB copper area and ambient conditions, as R_theta_JA varies significantly with mounting pad size. Consider the UIS capability if inductive load switching is present. Verify gate drive voltage compatibility with the specified R_DS(ON) thresholds.

Single FETs, MOSFETs Part Context

The FDP3632 belongs to the FDX3632 family, which includes variants FDH3632 (TO-247) and FDB3632 (D2PAK). All share identical electrical characteristics but differ in physical package and thermal resistance profiles. This TO-220 variant is designed for through-hole mounting, offering robust mechanical stability and efficient heat dissipation via the central tab.