Single FETs, MOSFETs FDP75N08 product image

FDP75N08

$0.91
  • Description:MOSFET N-CH 75V 75A TO220-3
  • Series:UniFET™
  • Mfr:onsemi
  • Package:Tube

SKU:7d29c523f58c Category: Brand:

  
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FDP75N08 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 75V 75A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDP75N08

  • Description:MOSFET N-CH 75V 75A TO220-3
  • Series:UniFET™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):75 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 37.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4468 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):131W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for FDP75N08

FDP75N08

Single FETs, MOSFETs Overview

The FDP75N08 is a single N-channel power MOSFET manufactured by onsemi, designed for high-efficiency switching applications. It features a 75 V drain-source breakdown voltage and supports a continuous drain current of 75 A at case temperature. The device exhibits a maximum on-resistance of 11 mΩ, ensuring low conduction losses. Key electrical parameters include a gate threshold voltage of 2 V, a total gate charge of 104 nC, and typical switching times with rise and fall characteristics optimized for performance. It operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 137 W of power.

Single FETs, MOSFETs Feature Summary

  • Optimized for reduced on-state resistance to enhance efficiency
  • Enhanced avalanche energy strength for robust operation
  • Improved switching performance characteristics

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Power factor correction circuits
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix and marking codes match official datasheet specifications. Check for obsolescence status as availability may be limited. Ensure storage conditions comply with moisture sensitivity levels defined in the package information. Validate that the received units correspond exactly to the ordered part number before integration into production.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a balance of high current handling and low on-resistance at 75 V ratings. Consider the thermal management requirements associated with its TO-220-3 package and 137 W power dissipation capability. Evaluate the gate charge and switching speeds against the driving circuit capabilities to ensure efficient operation. Compare alternative devices if lower on-resistance or different packaging formats are required for the specific application constraints.

Single FETs, MOSFETs Part Context

This device belongs to the UniFET series from onsemi, which focuses on providing reliable power switching solutions. The FDP75N08 utilizes silicon technology and is housed in a TO-220-3 through-hole package. It is part of a broader family of N-channel MOSFETs designed for general-purpose power applications where efficiency and ruggedness are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Check for compatible substitutes such as the SPP80P06PHXKSA1 from Infineon Technologies. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure the replacement device meets all original design specifications regarding voltage, current, and thermal performance.

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