FDS3672

$1.16

Description：MOSFET N-CH 100V 7.5A 8SOIC
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c3e87c329e2a Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

FDS3672 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 100V 7.5A 8SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDS3672

Description：MOSFET N-CH 100V 7.5A 8SOIC
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for FDS3672

FDS3672

Single FETs, MOSFETs Overview

The UMW FDS3672 is an N-Channel PowerTrench MOSFET designed for high-efficiency power switching applications. It features a Drain-to-Source Voltage (VDSS) of 100V and a continuous Drain Current (ID) of 7.5A at 25°C. The device exhibits a typical RDS(ON) of 19mΩ at VGS=10V, with a maximum rating of 23mΩ under the same conditions. Total Gate Charge (Qg(tot)) is typically 28nC at VGS=10V. It supports Single Pulse Avalanche Energy (EAS) up to 416mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Optimized efficiency at high frequencies through low Miller charge and low body diode reverse recovery charge.
Capable of handling single pulse and repetitive pulse unclamped inductive switching (UIS) events.
Designed for robust performance in distributed power architectures and voltage regulator modules.

Single FETs, MOSFETs Applications

DC/DC converters
Off-Line UPS systems
Primary switch for 24V and 48V systems
High voltage synchronous rectifier

Single FETs, MOSFETs Procurement Notes

Verify the package type matches SOP-8 specifications before integration. Confirm that the ordering code corresponds to tape and reel delivery modes if automated assembly is required. Ensure thermal management design accounts for the specified junction-to-ambient resistance values under expected operating loads.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-Channel MOSFET with low on-resistance is required for primary switching or synchronous rectification. Consider the 7.5A continuous current rating and 416mJ avalanche energy capability for inductive load protection. Evaluate thermal constraints based on the 25°C/W junction-to-case resistance for heat dissipation planning.

Single FETs, MOSFETs Part Context

This component belongs to the UMT Semiconductor FDS series of N-Channel MOSFETs. It utilizes PowerTrench technology to achieve low gate charge and fast switching speeds. The device is manufactured by UTD Semiconductor Co., Limited, marketed under the UMW brand, and is intended for general-purpose power management solutions.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 100V N-Channel MOSFETs offering similar RDS(ON) and Qg characteristics. Verify pinout compatibility with SOP-8 packages before substitution. Ensure replacement parts meet the same UIS and thermal requirements for direct interchangeability.