FDU6680

Single FETs, MOSFETs Overview

The FDU6680 is a P-channel PowerTrench MOSFET designed for high-side load switch applications. It features a drain-source voltage rating of -30V and a continuous drain current of -12A at 25°C case temperature. The device exhibits a low on-resistance (RDS(on)) of 17mΩ maximum at VGS = -10V, ensuring efficient power handling with minimal conduction losses. It utilizes Fairchild’s advanced trench technology to achieve superior RDS(on) per area performance.

Single FETs, MOSFETs Feature Summary

• Advanced trench technology for optimized specific on-resistance
• Enhanced dv/dt capability for robust switching performance
• Lead-free finish and RoHS compliant construction

Single FETs, MOSFETs Applications

• High-side load switches in portable devices
• Power management circuits for consumer electronics
• Battery protection modules

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including any suffix codes which may indicate tape and reel packaging or specific lot traceability requirements. Confirm that the component meets current environmental compliance standards such as RoHS and REACH regulations before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel solution is required for low-voltage high-current switching applications. Ensure the thermal design accounts for the package's thermal resistance characteristics to maintain junction temperatures within safe operating limits under continuous load conditions.

Single FETs, MOSFETs Part Context

This component belongs to Fairchild Semiconductor’s PowerTrench family of MOSFETs. The series is characterized by low gate charge and fast switching speeds, making it suitable for DC-DC converters and motor control applications where efficiency and thermal performance are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the -30V / -12A specification and SO-8FL package dimensions. Verify pinout compatibility and ensure equivalent RDS(on) and gate threshold voltage characteristics to maintain circuit functionality without redesign.