FDV305N

$0.13

Description：20V 900MA 350MW [email protected],900MA
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ff733f01a262 Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

FDV305N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Shenzhen Slkormicro Semicon Co., Ltd.. Its product description is 20V 900MA 350MW [email protected],900MA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDV305N

Description：20V 900MA 350MW [email protected],900MA
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：220mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：83 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：350mW (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for FDV305N

FDV305N

Single FETs, MOSFETs Overview

The FDV305N is a 20V N-Channel PowerTrench MOSFET designed for power management applications. It features a maximum continuous drain current of 0.9A and a breakdown voltage of 20V. The device offers low on-resistance, specified as 220mΩ at VGS=4.5V and 300mΩ at VGS=2.5V. It utilizes TrenchFET technology to achieve low gate charge and fast switching speeds. The component is housed in a surface-mount SOT-23 package with a thermal resistance of 357°C/W.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET Power MOSFET technology for high performance
Optimized for low gate charge and fast switching speed
Features extremely low on-resistance for efficient operation

Single FETs, MOSFETs Applications

Battery protection
Load switch
Power management

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation when sourcing, as the FDV305N part number appears across multiple vendors including Fairchild Semiconductor and Guangdong Youtai Semico. Confirm that the specific datasheet matches the required electrical parameters, particularly the RDS(on) values and package dimensions. Ensure the source document aligns with the SOT-23 pinout and absolute maximum ratings provided in the official specifications.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a compact N-Channel switch with a 20V drain-source voltage rating. The 0.9A continuous current capability suits low-power load switching tasks. Consider the low gate charge characteristics for applications where driving efficiency is critical. The SOT-23 package is appropriate for space-constrained designs requiring surface mount integration.

Single FETs, MOSFETs Part Context

This component belongs to the PowerTrench MOSFET family, which employs specialized trench gate technology to minimize on-resistance. The FDV305N specifically targets low-voltage, low-current switching scenarios within portable and consumer electronics. Its design focuses on balancing conduction losses with switching performance in a small footprint.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers include FDD3706, FDD6530A, FDG327N, FDG329N, FDS6064N3, FDS6064N7, FDS6162N3, FDS6572A, and FDS6574A from Fairchild Semiconductor.