FDZ202P

Single FETs, MOSFETs Overview

The FDZ202P is a P-Channel PowerTrench MOSFET featuring a 12-BGA (2x2.5) surface-mount package. It supports a drain-source voltage of -20 V and a continuous drain current of -5.5 A at 25°C. The device specifies an on-resistance of 45 mΩ at VGS = -4.5 V and 75 mΩ at VGS = -2.5 V. Key electrical parameters include a gate threshold voltage of -1.5 V max, total gate charge of 13 nC max, and input capacitance of 884 pF. Thermal characteristics provide a junction-to-ambient resistance of 64 °C/W on a standard board.

Single FETs, MOSFETs Feature Summary

• Combines advanced 2.5V specified PowerTrench process with BGA packaging to minimize PCB space and on-resistance.
• Offers ultra-low profile construction with less than 0.80 mm height when mounted to the PCB.
• Provides outstanding thermal transfer characteristics, rated four times better than SSOT-6 packages.
• Features ultra-low gate charge multiplied by on-resistance figure-of-merit for efficient switching.

Single FETs, MOSFETs Applications

• Battery management systems
• Load switch applications
• Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific revision matches project requirements, as datasheet specifications may be subject to change without notice. Ensure proper handling procedures are followed due to the surface mount nature of the 12-BGA package. Review absolute maximum ratings to prevent damage during operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance in a compact footprint. The 2.5V specified drive capability makes it suitable for logic-level control interfaces. Evaluate thermal performance based on actual PCB copper pad dimensions, as junction-to-ambient resistance varies significantly with layout. Consider the -20 V rating for low-voltage power rails.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family from Fairchild Semiconductor, now part of onsemi. It utilizes a specialized trench MOSFET technology optimized for low gate charge and high current density. The 12-BGA package represents a packaging innovation designed to replace larger surface-mount options while maintaining superior thermal dissipation capabilities.

Single FETs, MOSFETs Replacement Considerations

Check for updated part numbers following the integration of Fairchild Semiconductor into onsemi. Verify pinout compatibility and thermal resistance values against potential substitutes. Ensure replacement devices meet the same -20 V and -5.5 A specifications.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage allowed?

The absolute maximum rating for gate-source voltage is ±12 V.

How does the thermal resistance compare to other packages?

The thermal transfer characteristics are rated four times better than the SSOT-6 package.

What is the operating temperature range?

The junction temperature range is -55°C to +150°C.