FEP16FTD

Diode Arrays Overview

The FEP16FTD is a general-purpose diode array manufactured by onsemi, housed in a TO-220-3 through-hole package. It features one pair of serially connected diodes with a maximum DC reverse voltage (Vr) of 300 V and an average rectified current (Io) of 16 A per diode. The device exhibits a reverse recovery time (trr) of 50 ns and operates within a junction temperature range of -55°C to 150°C. Forward voltage is specified at 1.3 V when conducting 8 A, while reverse leakage current remains at 10 µA under 300 V conditions.

Diode Arrays Feature Summary

• Provides high-speed rectification capabilities suitable for applications requiring fast recovery characteristics.

Diode Arrays Applications

• General purpose rectification circuits
• Power supply designs utilizing through-hole mounting

Diode Arrays Procurement Notes

Verify component authenticity and datasheet alignment due to the part's discontinued status. Confirm that the TO-220-3 package dimensions match the target PCB footprint. Ensure thermal management strategies account for the 150°C maximum junction temperature limit during operation.

Diode Arrays Selection Notes

Select this component for designs requiring 300 V blocking capability and 16 A continuous current handling in a standard through-hole configuration. Evaluate the 50 ns reverse recovery time against switching frequency requirements to ensure minimal switching losses.

Diode Arrays Part Context

This component belongs to the FEP16 series of ultra-fast recovery rectifiers from onsemi. It utilizes silicon technology and is designed for robust performance in industrial and consumer power electronics. The TO-220-3 package facilitates efficient heat dissipation for medium-power applications.

Diode Arrays Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Verify electrical parameters such as voltage ratings, current capacity, and recovery times before implementing any alternative components.