Diode Arrays FFA20U20DNTU product image

FFA20U20DNTU

$0.91
  • Description:DIODE ARRAY GP 200V 20A TO-3P
  • Series:-

SKU:812bfb417c78 Category: Brand:

  
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FFA20U20DNTU is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 200V 20A TO-3P. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FFA20U20DNTU

  • Description:DIODE ARRAY GP 200V 20A TO-3P
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):40 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 200 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FFA20U20DNTU

FFA20U20DNTU

Diode Arrays Overview

The FFA20U20DNTU is an ultrafast recovery power rectifier manufactured by onsemi, originally developed by Fairchild Semiconductor. It features a dual common cathode configuration housed in a TO-3P package. Key electrical specifications include a peak repetitive reverse voltage of 200 V and an average rectified forward current of 20 A at a case temperature of 100°C. The device exhibits a maximum instantaneous forward voltage of 1.2 V at 25°C and 1.0 V at 100°C when conducting 20 A. Reverse recovery time is specified at a maximum of 40 ns with a reverse recovery charge of 80 nC under test conditions of IF=20A and di/dt=200A/µs. The non-repetitive peak surge current capability is 200 A for a single half-sine wave at 60 Hz.

Diode Arrays Feature Summary

  • Ultrafast recovery characteristics with soft recovery behavior to minimize switching noise
  • Low forward voltage drop for improved efficiency in high-current applications
  • Robust avalanche energy rating of 0.5 mJ for enhanced ruggedness

Diode Arrays Applications

  • Power switching circuits
  • Output rectifiers
  • Freewheeling diodes
  • Switching mode power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'NTU' against official documentation to confirm packaging details, as datasheets may primarily reference the base part number. Confirm availability status, as this component originates from Fairchild Semiconductor and may be subject to lifecycle changes or discontinuation notices. Ensure compliance with RoHS directives if required for the target application. Cross-reference thermal resistance values with the specific mounting method used in the final assembly.

Diode Arrays Selection Notes

Select this component for applications requiring fast switching speeds and low conduction losses. The TO-3P package provides robust mechanical stability and efficient heat dissipation for high-power scenarios. Consider the 200 V rating relative to the system's peak reverse voltage requirements. Evaluate the thermal management strategy based on the junction-to-case thermal resistance of 2.0 °C/W to ensure operation within the -65°C to +150°C junction temperature range.

Diode Arrays Part Context

This device belongs to the ultrafast recovery rectifier family, designed for high-frequency power conversion. Originally produced by Fairchild Semiconductor, it represents a standard solution for hard-switching applications where rapid turn-off is critical. The dual common cathode arrangement allows for use in full-bridge or center-tapped configurations without requiring external diode matching.

Diode Arrays Replacement Considerations

Direct substitutes must match the 200 V, 20 A, TO-3P specification with comparable reverse recovery times. Verify pinout compatibility, particularly the anode-cathode-anode configuration of the TO-3P package. Check for equivalent avalanche energy ratings and thermal resistance values to ensure identical performance in the existing circuit design.

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