Diode Arrays FFAF20U20DNTU product image

FFAF20U20DNTU

$0.82
  • Description:DIODE ARRAY GP 200V 20A TO-3PF
  • Series:-

SKU:7eee05bdd6c1 Category: Brand:

  
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FFAF20U20DNTU is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 200V 20A TO-3PF. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FFAF20U20DNTU

  • Description:DIODE ARRAY GP 200V 20A TO-3PF
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):40 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 200 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3PF
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FFAF20U20DNTU

FFAF20U20DNTU

Diode Arrays Overview

The FFAF20U20DNTU is an ultrafast recovery power rectifier manufactured by onsemi, formerly Fairchild Semiconductor. It features a dual common cathode configuration housed in a TO-3PF package. The device supports a peak repetitive reverse voltage of 200 V and an average rectified forward current of 20 A at a case temperature of 100°C. Key electrical characteristics include a maximum instantaneous forward voltage of 1.2 V at 25°C and a maximum reverse recovery time of 40 ns. The component operates within a junction and storage temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

  • Ultrafast recovery with soft recovery characteristics
  • Low forward voltage drop for high efficiency
  • Dual common cathode configuration

Diode Arrays Applications

  • Power switching circuits
  • Output rectifiers
  • Freewheeling diodes
  • Switching mode power supplies

Diode Arrays Procurement Notes

Verify the specific manufacturer origin, as the datasheet indicates Fairchild Semiconductor while the brand is listed as onsemi following corporate acquisition. Confirm the exact suffix designation against current official catalogs to ensure compatibility with the original TO-3PF specifications. Check for any lifecycle status updates or obsolescence notices from the supplier before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component for applications requiring fast switching speeds and low conduction losses. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance. Verify that the circuit's peak repetitive reverse voltage does not exceed the 200 V rating under all operating conditions. Consider the non-repetitive peak surge current capability when designing protection against transient overcurrent events.

Diode Arrays Part Context

This part belongs to the FFAF series of ultrafast recovery power rectifiers. It is designed for high-frequency power conversion applications where rapid switching and minimal reverse recovery charge are critical. The TO-3PF package provides robust mechanical mounting and efficient heat dissipation capabilities suitable for industrial and commercial power supply designs.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 200 V reverse voltage, 20 A current rating, and TO-3PF package dimensions. Verify that alternative components offer comparable reverse recovery times and forward voltage characteristics to maintain circuit performance.

Diode Arrays FAQ

What is the maximum reverse recovery time for this rectifier?

The maximum reverse recovery time is 40 ns, measured at a forward current of 20 A and a rate of change of current (di/dt) of 200 A/µs.

Does the device exhibit hard or soft recovery?

The FFAF20U20DNTU features ultrafast recovery with soft recovery characteristics, which helps minimize electromagnetic interference during switching transitions.

What is the avalanche energy rating?

The avalanche energy rating is 0.5 mJ, allowing the device to withstand limited avalanche conditions without damage.

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