FFB20UP20DN

Diode Arrays Overview

The FFB20UP20DN is a 10A, 200V ultrafast dual rectifier manufactured by Fairchild Semiconductor. It features a silicon nitride passivated ion-implanted epitaxial planar construction designed for low forward voltage drop and minimal stored charge. The device supports a peak repetitive reverse voltage of 200V and an average rectified forward current of 10A at 155°C case temperature. It includes avalanche energy rating capabilities and operates within a junction temperature range of -55 to +175°C.

Diode Arrays Feature Summary

• Ultrafast recovery characteristics minimize ringing and electrical noise in power switching circuits
• Low forward voltage drop reduces conduction losses
• Avalanche energy rated for robust operation under transient conditions
• Planar construction with silicon nitride passivation ensures reliability

Diode Arrays Applications

• Output rectifiers in switching mode power supplies
• Free-wheeling diodes for motor applications
• Power switching circuits requiring fast recovery

Diode Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or authorized successor entities like onsemi due to corporate acquisitions. Confirm the specific revision level (Rev. A) matches design requirements. Ensure the TO-263 package marking corresponds to 'F20UP20DN'. Validate thermal resistance parameters against actual mounting conditions for reliable heat dissipation.

Diode Arrays Selection Notes

Select this component for high-frequency switching applications where low reverse recovery charge is critical. The dual common cathode configuration simplifies circuit layout for synchronous rectification or freewheeling roles. Consider the 10A current rating relative to thermal management capabilities in the final assembly environment.

Diode Arrays Part Context

This device belongs to the family of ultrafast rectifiers designed for efficient power conversion. It utilizes ion-implanted epitaxial planar technology to achieve superior switching performance compared to standard rectifiers. The dual configuration allows for compact designs in bridge or half-bridge topologies.

Diode Arrays Replacement Considerations

Cross-reference with other 10A, 200V ultrafast dual rectifiers from manufacturers such as KODENSHI_AUK CORP. (e.g., SF20A200HCI). Verify pinout compatibility and thermal characteristics before substitution.

Diode Arrays FAQ

What is the maximum non-repetitive peak surge current?

The maximum non-repetitive peak surge current is 100A for a 60Hz single half-sine wave.

Does the device support avalanche operation?

Yes, the device is avalanche energy rated, with a specified energy of 10mJ for an inductance of 20mH.

What is the typical reverse recovery time at 10A?

The typical reverse recovery time (trr) is 27ns when tested at IF=10A, di/dt=200A/µs, and VCC=130V.