FFSH1665ADN-F155

Diode Arrays Overview

The FFSH1665ADN-F155 is a Silicon Carbide (SiC) Schottky Diode from onsemi's EliteSiC series, housed in a TO-247-3LD package. It features a peak repetitive reverse voltage of 650 V and continuous forward currents ranging from 8 A to 16 A depending on case temperature limits. The device supports a maximum junction temperature of 175°C and offers an avalanche energy rating of 49 mJ. Electrical characteristics include a typical forward voltage of 1.5 V at 8 A and 25°C, with a maximum reverse current of 200 µA at 650 V.

Diode Arrays Feature Summary

• No reverse recovery or forward recovery effects for improved switching performance
• Positive temperature coefficient facilitating ease of paralleling
• High surge current capacity and avalanche rated capability
• Temperature independent switching characteristics

Diode Arrays Applications

• Switching Mode Power Supplies (SMPS)
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• General purpose power switching circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix -F155 against official documentation to confirm shipping configuration details. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under varying case temperatures. Confirm compliance requirements such as RoHS status directly from the manufacturer datasheet before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency operation and reduced system size due to superior SiC switching properties. Evaluate thermal derating curves to determine appropriate heat sinking based on expected case temperatures. Consider the positive temperature coefficient for parallel configurations to ensure balanced current sharing among multiple devices.

Diode Arrays Part Context

This part belongs to onsemi's EliteSiC family of silicon carbide Schottky diodes. These devices utilize advanced semiconductor technology to deliver higher reliability and efficiency compared to traditional silicon alternatives. The series is designed to support next-generation power electronics by enabling faster operating frequencies and increased power density in compact form factors.

Diode Arrays Replacement Considerations

FFSH40120ADN-F155

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 750 A at a case temperature of 25°C and 730 A at 150°C for a duration of 10 microseconds.

How does the forward voltage change with temperature?

The forward voltage increases with temperature; it is typically 1.5 V at 25°C, 1.6 V at 125°C, and 1.72 V at 175°C when tested at 8 A.

Is the device suitable for unclamped inductive switching?

Yes, the device is avalanche rated with a single pulse avalanche energy capability of 49 mJ, making it suitable for handling unclamped inductive switching events within these limits.