FFSH1665ADN-F155

Diode Arrays Overview

The FFSH1665ADN-F155 is a Silicon Carbide Schottky Diode rated for 650 V peak repetitive reverse voltage and 16 A continuous forward current. It features a TO-247-3LD package with a maximum junction temperature of 175°C. The device exhibits no reverse recovery or forward recovery, ensuring temperature-independent switching characteristics. Electrical parameters include a typical forward voltage of 1.5 V at 8 A and 25°C, and a maximum reverse current of 200 µA at 650 V.

Diode Arrays Feature Summary

• Avalanche rated for 49 mJ single pulse energy
• Positive temperature coefficient facilitates ease of paralleling
• High surge current capacity for robust transient performance

Diode Arrays Applications

• General purpose power applications
• Switching Mode Power Supplies (SMPS)
• Solar inverters and UPS systems
• Power switching circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix -F155 against official documentation to confirm shipping quantities and packaging details. Ensure compliance with RoHS standards and confirm Pb-free status as indicated in the datasheet. Cross-reference the document number 98AON13853G for accurate technical specifications before finalizing procurement.

Diode Arrays Selection Notes

Select this component for high-frequency applications requiring superior thermal performance and reliability compared to silicon devices. Consider the 1.96 °C/W junction-to-case thermal resistance for heat sink design. Evaluate the 49 mJ avalanche rating for circuit protection requirements and ensure operating temperatures remain within the specified -55°C to +175°C range.

Diode Arrays Part Context

This part belongs to the EliteSiC family from onsemi, utilizing wide bandgap technology. It replaces traditional silicon rectifiers to achieve higher efficiency and reduced system size. The TO-247-3LD package provides a compact form factor suitable for through-hole mounting in high-power density designs.

Diode Arrays Replacement Considerations

FFSH1665ADN-F085

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 750 A at a case temperature of 25°C for a 10 µs duration.

Does the device exhibit reverse recovery charge?

No, the Silicon Carbide Schottky construction ensures there is no reverse recovery current or forward recovery voltage.

What is the thermal resistance from junction to case?

The maximum thermal resistance from junction to case is 1.96 °C/W per leg or 0.95 °C/W per device.