FJV1845FMTF

Single Bipolar Transistors Overview

The FJV1845FMTF is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a SOT-23 surface-mount package. It features a collector-emitter voltage (VCEO) of 120 V and a continuous collector current rating of 50 mA. The device offers a DC current gain (hFE) ranging from 200 to 1200 depending on the classification bin. Key electrical parameters include a base-emitter saturation voltage of 0.07 V at 10 mA collector current, a transition frequency (fT) of 110 MHz, and a maximum power dissipation of 300 mW.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 120 V collector-emitter breakdown rating suitable for demanding signal applications.
• Wide DC current gain range spanning 200 to 1200, providing flexibility for various amplification requirements.
• Low saturation voltage characteristics that support efficient switching performance within small-signal circuits.

Single Bipolar Transistors Applications

• General-purpose amplifier stages
• Switching circuits requiring high voltage isolation
• Complementary pairing with PNP transistors

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification bin required for your application against the datasheet options. Confirm the package marking code matches the intended revision. Ensure the supply source provides original manufacturer documentation to validate authenticity before integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is needed in a compact SOT-23 footprint. Consider the wide hFE variation and choose the appropriate bin for consistent gain performance. Verify thermal management capabilities as the 300 mW dissipation limit requires adequate heat sinking or PCB copper area for reliable operation.

Single Bipolar Transistors Part Context

This part belongs to the FJV series of small-signal bipolar junction transistors. It serves as the NPN complement to the FJV992 PNP transistor, allowing for matched pairs in push-pull configurations. The series is designed for general-purpose electronic applications requiring reliable performance in standard surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors with similar 120 V ratings and SOT-23 packaging. Verify pinout compatibility and ensure replacement parts meet the minimum hFE and fT specifications required by the circuit design.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the FJV1845?

The maximum collector-base voltage (VCBO) is rated at 120 V.

Does the FJV1845 have a complementary PNP counterpart?

Yes, it is the complement to the FJV992 PNP transistor.

What is the typical output capacitance of this transistor?

The typical output capacitance (Cob) is 2.5 pF under specified test conditions.