FMMT413TA

$4.06

Description：TRANS NPN 50V 0.1A SOT-23-3
Series：-

SKU:f812cb741a6f Category: Single Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

FMMT413TA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 50V 0.1A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FMMT413TA

Description：TRANS NPN 50V 0.1A SOT-23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN - Avalanche Mode
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：150mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
Power - Max：330 mW
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for FMMT413TA

FMMT413TA

Single Bipolar Transistors Overview

The FMMT413TA is an NPN silicon planar avalanche transistor manufactured by Diodes Incorporated, housed in a SOT-23 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 50V and a collector-base breakdown voltage (BVCBO) of 150V. The device supports a continuous collector current of 100mA and a peak pulse avalanche current of 50A with a 25ns pulse width. Electrical characteristics include a transition frequency (fT) of 150MHz at 10mA/5V, a maximum power dissipation of 330mW, and a junction-to-ambient thermal resistance of 378°C/W. Operating temperature ranges from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

Optimized for avalanche mode operation to generate high-current pulses with fast edges
Low inductance packaging design facilitates rapid switching performance
High peak avalanche current capability suitable for demanding pulsed applications

Single Bipolar Transistors Applications

Laser LED drivers
Fast edge generation circuits
High speed pulse generators

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TA' corresponds to the required reel size and quantity configuration during procurement. Confirm that the component meets all necessary environmental compliance standards relevant to the target application region. Ensure that the sourcing channel provides authentic parts matching the manufacturer's specifications to avoid counterfeit risks.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand precise avalanche mode control and high-speed pulse generation capabilities. The low inductance SOT-23 package makes it suitable for compact designs requiring fast edge transitions. Consider the 50V collector-emitter rating and 100mA continuous current limits when designing the driving circuitry to ensure reliable operation within absolute maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the FMMT413 series of NPN silicon planar bipolar transistors designed specifically for avalanche operation. Originally developed by Zetex Semiconductors plc, the product line is now distributed by Diodes Incorporated. The series utilizes tight process control to achieve consistent performance in pulsed applications, distinguishing it from standard switching transistors not optimized for avalanche conditions.

Single Bipolar Transistors Replacement Considerations

FMMT413TD serves as a functional equivalent within the same family, differing primarily in packaging quantity per reel rather than electrical characteristics.

Single Bipolar Transistors FAQ

What is the maximum peak avalanche current supported by the FMMT413TA?

The device supports a peak avalanche current of 50A with a pulse width of 25ns.

How does the packaging affect the performance of this transistor?

The low inductance SOT-23 packaging combines with tight process control to produce high current pulses with fast edges, which is ideal for laser diode driving applications.