Single FETs, MOSFETs FQA38N30 product image

FQA38N30

$2.98
  • Description:MOSFET N-CH 300V 38.4A TO3P
  • Series:QFET®
  • Mfr:onsemi
  • Package:Bulk,Tube

SKU:d9a28cddc3ee Category: Brand:

  
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FQA38N30 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 300V 38.4A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQA38N30

  • Description:MOSFET N-CH 300V 38.4A TO3P
  • Series:QFET®
  • Mfr:onsemi
  • Package:Bulk,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):300 V
  • Current - Continuous Drain (Id) @ 25°C:38.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:85mOhm @ 19.2A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):290W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-3P
  • Package / Case:TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for FQA38N30

FQA38N30

Single FETs, MOSFETs Overview

The FQA38N30 is a single N-Channel power MOSFET manufactured by onsemi, utilizing QFET technology. It features a 300V drain-source voltage rating and a continuous drain current of 38.4A. The device exhibits a maximum on-resistance of 85mΩ at 10V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature and dissipates up to 290W of power. Key switching parameters include a gate charge of 90nC and a forward transconductance of 24S. The component is housed in a TO-3PN-3 through-hole package.

Single FETs, MOSFETs Feature Summary

  • QFET technology for optimized performance
  • High voltage capability with 300V breakdown
  • Low on-resistance for efficient conduction
  • Robust thermal handling for high power applications

Single FETs, MOSFETs Applications

  • Motor control systems
  • Power supply circuits
  • Industrial switching applications

Single FETs, MOSFETs Procurement Notes

Verify the current lifecycle status before procurement as the component may be obsolete or nearing end-of-life. Confirm that the TO-3PN-3 through-hole package aligns with existing board designs. Ensure compatibility with required thermal management solutions given the 290W dissipation rating. Check for updated datasheets reflecting any final manufacturing changes prior to integration into new production runs.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage, high-current discrete solution is required in a through-hole format. The 300V rating suits medium-voltage DC bus applications. Consider the 85mΩ on-resistance for efficiency requirements. Evaluate the thermal resistance characteristics against the expected ambient conditions. Compare against surface-mount alternatives if space constraints exist, though this part is specific to leaded mounting.

Single FETs, MOSFETs Part Context

This device belongs to the FQA series of N-Channel MOSFETs from onsemi. The series utilizes proprietary QFET architecture designed to balance low on-resistance with fast switching speeds. These components are typically used in general-purpose power switching environments where reliability and high current handling are prioritized over miniaturization.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications carefully if considering alternative manufacturers' parts with similar ratings.

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