FQD3N50CTM

Single FETs, MOSFETs Overview

The FQD3N50CTM is a single N-channel power MOSFET from onsemi's Advanced QFET C-series, designed for surface-mount applications in the DPAK-3 (TO-252-3) package. It utilizes silicon technology and operates in enhancement mode with a drain-source breakdown voltage of 500 V and a continuous drain current of 2.5 A at case temperature. The device features a maximum on-resistance of 2.1 Ohms at 10 V gate drive, supporting a power dissipation of 35 W. Electrical characteristics include a gate-source voltage range of ±30 V, rise and fall times of 25 ns, and a minimum forward transconductance of 1.5 S. It functions reliably within an operating temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Advanced QFET C-series planar stripe technology for low on-state resistance
• High switching speed capability with defined rise and fall times
• Robust avalanche energy handling performance
• Surface-mount DPAK-3 packaging for efficient thermal management

Single FETs, MOSFETs Applications

• High efficiency switch mode power supplies
• Active power factor correction circuits
• Electronic lamp ballasts based on half bridge topology

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status via official documentation as regulatory requirements vary by region. Check datasheet revisions for any updates to electrical parameters or pin configurations before finalizing design integration. Ensure proper handling procedures are followed during assembly to prevent electrostatic discharge damage to the gate oxide layer.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating and moderate current capacity are required in a compact surface-mount form factor. Compare on-resistance values against alternative packages to ensure thermal performance meets system constraints. Evaluate gate charge specifications if driving frequency impacts switching losses significantly. Verify that the DPAK-3 footprint aligns with existing PCB layout requirements and soldering capabilities.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's discrete semiconductor transistor category, specifically within the MOSFET segment. It is part of the broader Advanced QFET family, which emphasizes improved switching performance and reduced conduction losses compared to standard MOSFET designs. The manufacturer specializes in power management and sensing solutions, positioning this component for industrial and consumer electronics applications requiring reliable high-voltage switching.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 500 V N-channel MOSFETs in TO-252 packages with similar Rds(on) and Id ratings. Verify pinout compatibility and thermal resistance values before substitution. Consider newer generation devices from the same manufacturer offering lower on-resistance or enhanced avalanche ruggedness.