FQP1P50

Description：MOSFET P-CH 500V 1.5A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:0d6e12a647a1 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQP1P50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 500V 1.5A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQP1P50

Description：MOSFET P-CH 500V 1.5A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for FQP1P50

FQP1P50

Single FETs, MOSFETs Overview

The FQP1P50 is a P-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a -500V drain-source voltage and a continuous drain current of -1.5A at 25°C case temperature. The device exhibits a maximum on-resistance of 10.5Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 11nC, a breakdown voltage of -500V, and a threshold voltage range of -3.0V to -5.0V. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for optimized performance
Designed to withstand high energy pulses in avalanche and commutation modes
Features fast switching characteristics with low gate charge
Includes 100% avalanche testing and improved dv/dt capability

Single FETs, MOSFETs Applications

Electronic lamp ballasts based on complementary half bridge configurations

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (Rev. A) and manufacturer origin (Fairchild Semiconductor or onsemi) when sourcing components. Confirm that the TO-220 package dimensions match the required mechanical constraints. Ensure compliance with the life support policy restrictions if the application involves critical systems requiring explicit written approval.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage P-Channel switching capabilities up to 500V. Consider the thermal resistance values and derating curves for proper heat dissipation design. Evaluate the gate charge requirements against the driving circuit's output capability to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series of power MOSFETs. It represents an evolution in planar stripe DMOS technology designed to minimize on-state resistance while maintaining robust switching performance. The product line focuses on providing superior reliability for power conversion and switching applications.