FQP4N20L

Single FETs, MOSFETs Overview

The FQP4N20L is an N-Channel QFET MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It features a 200 V drain-source voltage rating and a continuous drain current of 3.8 A at 25°C case temperature. The device exhibits a maximum on-resistance of 1.35 Ω at VGS = 10 V and ID = 1.9 A. Key electrical characteristics include a typical gate charge of 4.0 nC and a reverse transfer capacitance of 6.0 pF. It is housed in a TO-220 package with a junction-to-case thermal resistance of 2.78 °C/W.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
• Capable of withstanding high energy pulses in avalanche and commutation modes.
• Features low gate charge and reverse transfer capacitance for efficient operation.
• Subjected to 100% avalanche testing to ensure reliability under stress conditions.

Single FETs, MOSFETs Applications

• High efficiency switching DC/DC converters
• Switch mode power supplies
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against the manufacturer's official database, as system integrations may alter nomenclature. Confirm compliance with RoHS directives and lead-free status requirements specific to your manufacturing process. Ensure the component meets all absolute maximum ratings for your intended operating environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 200 V blocking capability and moderate current handling up to 3.8 A. Consider its low gate charge for driving efficiency in switch-mode circuits. Evaluate the thermal management requirements based on the specified junction-to-case resistance and derating curves for continuous operation above 25°C.

Single FETs, MOSFETs Part Context

This device belongs to the QFET family produced using advanced DMOS technology. Fairchild Semiconductor has been integrated into ON Semiconductor, which manages the product lifecycle and documentation. The datasheet provides comprehensive electrical and thermal parameters necessary for circuit design and simulation.

Single FETs, MOSFETs Replacement Considerations

Check ON Semiconductor's official cross-reference tools for updated part numbers due to naming convention changes from underscores to dashes. Verify pinout compatibility and electrical parameter equivalence before substituting with other N-channel MOSFETs in existing designs.

Single FETs, MOSFETs FAQ

What is the maximum single pulsed avalanche energy rating?

The FQP4N20L is rated for a single pulsed avalanche energy of 52 mJ.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises, as illustrated in the normalized on-resistance versus temperature graph in the datasheet.